摘要
Nanoscale tellurium (Te) materials are promising for advanced optoelectronics owing to their outstanding photoelectrical properties. In this work, high‐performance optoelectronic nanodevice based on a single tellurium nanotube (NT) was prepared by focused ion beam (FIB)‐ assisted technique. The individual Te NT photodetector demonstrates a high photoresponsivity of 1.65 × 104 AW−1 and a high photoconductivity gain of 5.0 × 106%, which shows great promise for further optoelectronic device applications.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 11 |
| 期刊 | Micromachines |
| 卷 | 13 |
| 期 | 1 |
| DOI | |
| 出版状态 | 已出版 - 1月 2022 |
学术指纹
探究 'Fib‐assisted fabrication of single tellurium nanotube based high performance photodetector' 的科研主题。它们共同构成独一无二的学术指纹。引用此
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