Ferroelectricity of ultrathin ferroelectric Langmuir-Blodgett polymer films on conductive LaNiO3 electrodes

S. Z. Yuan; X. J. Meng; J. L. Sun; Y. F. Cui; J. L. Wang; L. Tian; J. H. Chu

doi:10.1016/j.matlet.2011.03.061

Ferroelectricity of ultrathin ferroelectric Langmuir-Blodgett polymer films on conductive LaNiO₃ electrodes

S. Z. Yuan
, X. J. Meng
, J. L. Sun
, Y. F. Cui
, J. L. Wang
, L. Tian
, J. H. Chu

CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件 › 文章 › 同行评审

7 引用（Scopus）

摘要

LaNiO₃ (LNO) films with a surface roughness rms of 0.384 nm and a sheet resistance of about 200 Ω were prepared on SrTiO₃ and Si/SiO₂ substrates respectively by rf magnetron sputtering technique. The surface of LNO on Si/SiO₂ substrate is smoother than that on SrTiO₃ substrate. A nominal 2-monolayer (ML) poly(vinylidenefluoride- trifluoroethylene) film with a thickness of about 3 nm was deposited on LNO coated Si/SiO₂ substrate by Langmuir-Blodgett (LB) technology. Piezoresponse force microscopy (PFM) measurements show that the LB films demonstrate an obvious feature of polarization switching and good voltage durability. The results suggest that the ultrathin polymer films may be utilized to explore ferroelectric tunnel junctions.

源语言	英语
页（从-至）	1989-1991
页数	3
期刊	Materials Letters
卷	65
期	12
DOI	https://doi.org/10.1016/j.matlet.2011.03.061
出版状态	已出版 - 30 6月 2011
已对外发布	是

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10.1016/j.matlet.2011.03.061

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@article{a9ad9f7832534e818f70f2dfd4ddc061,

title = "Ferroelectricity of ultrathin ferroelectric Langmuir-Blodgett polymer films on conductive LaNiO3 electrodes",

abstract = "LaNiO3 (LNO) films with a surface roughness rms of 0.384 nm and a sheet resistance of about 200 Ω were prepared on SrTiO3 and Si/SiO2 substrates respectively by rf magnetron sputtering technique. The surface of LNO on Si/SiO2 substrate is smoother than that on SrTiO3 substrate. A nominal 2-monolayer (ML) poly(vinylidenefluoride- trifluoroethylene) film with a thickness of about 3 nm was deposited on LNO coated Si/SiO2 substrate by Langmuir-Blodgett (LB) technology. Piezoresponse force microscopy (PFM) measurements show that the LB films demonstrate an obvious feature of polarization switching and good voltage durability. The results suggest that the ultrathin polymer films may be utilized to explore ferroelectric tunnel junctions.",

keywords = "Ferroelectric tunnel junctions, Ferroelectricity, LB films, LaNiO films",

author = "Yuan, \{S. Z.\} and Meng, \{X. J.\} and Sun, \{J. L.\} and Cui, \{Y. F.\} and Wang, \{J. L.\} and L. Tian and Chu, \{J. H.\}",

year = "2011",

month = jun,

day = "30",

doi = "10.1016/j.matlet.2011.03.061",

language = "英语",

volume = "65",

pages = "1989--1991",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Ferroelectricity of ultrathin ferroelectric Langmuir-Blodgett polymer films on conductive LaNiO3 electrodes

AU - Yuan, S. Z.

AU - Meng, X. J.

AU - Sun, J. L.

AU - Cui, Y. F.

AU - Wang, J. L.

AU - Tian, L.

AU - Chu, J. H.

PY - 2011/6/30

Y1 - 2011/6/30

N2 - LaNiO3 (LNO) films with a surface roughness rms of 0.384 nm and a sheet resistance of about 200 Ω were prepared on SrTiO3 and Si/SiO2 substrates respectively by rf magnetron sputtering technique. The surface of LNO on Si/SiO2 substrate is smoother than that on SrTiO3 substrate. A nominal 2-monolayer (ML) poly(vinylidenefluoride- trifluoroethylene) film with a thickness of about 3 nm was deposited on LNO coated Si/SiO2 substrate by Langmuir-Blodgett (LB) technology. Piezoresponse force microscopy (PFM) measurements show that the LB films demonstrate an obvious feature of polarization switching and good voltage durability. The results suggest that the ultrathin polymer films may be utilized to explore ferroelectric tunnel junctions.

AB - LaNiO3 (LNO) films with a surface roughness rms of 0.384 nm and a sheet resistance of about 200 Ω were prepared on SrTiO3 and Si/SiO2 substrates respectively by rf magnetron sputtering technique. The surface of LNO on Si/SiO2 substrate is smoother than that on SrTiO3 substrate. A nominal 2-monolayer (ML) poly(vinylidenefluoride- trifluoroethylene) film with a thickness of about 3 nm was deposited on LNO coated Si/SiO2 substrate by Langmuir-Blodgett (LB) technology. Piezoresponse force microscopy (PFM) measurements show that the LB films demonstrate an obvious feature of polarization switching and good voltage durability. The results suggest that the ultrathin polymer films may be utilized to explore ferroelectric tunnel junctions.

KW - Ferroelectric tunnel junctions

KW - Ferroelectricity

KW - LB films

KW - LaNiO films

UR - https://www.scopus.com/pages/publications/79955045633

U2 - 10.1016/j.matlet.2011.03.061

DO - 10.1016/j.matlet.2011.03.061

M3 - 文章

AN - SCOPUS:79955045633

SN - 0167-577X

VL - 65

SP - 1989

EP - 1991

JO - Materials Letters

JF - Materials Letters

IS - 12

ER -

Ferroelectricity of ultrathin ferroelectric Langmuir-Blodgett polymer films on conductive LaNiO3 electrodes

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Ferroelectricity of ultrathin ferroelectric Langmuir-Blodgett polymer films on conductive LaNiO₃ electrodes