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Ferroelectric field effect transistors for electronics and optoelectronics

  • Hanxue Jiao
  • , Xudong Wang
  • , Shuaiqin Wu
  • , Yan Chen
  • , Junhao Chu
  • , Jianlu Wang*
  • *此作品的通讯作者
  • CAS - Shanghai Institute of Technical Physics
  • University of Chinese Academy of Sciences
  • Fudan University

科研成果: 期刊稿件 › 文献综述 › 同行评审

摘要

Ferroelectric materials have shown great value in the modern semiconductor industry and are considered important function materials due to their high dielectric constant and tunable spontaneous polarization. A ferroelectric field effect transistor (FeFET) is a field effect transistor (FET) with ferroelectric polarization field introduced to regulate carriers in semiconductors. With the coupling of ferroelectric and semiconductor, FeFETs are attractive for advanced electronic and optoelectronic applications, including emerging memories, artificial neural networks, high-performance photodetectors, and smart sensors. In this review, representative research results of FeFETs are reviewed from the perspective of structures and applications. Here, the background and significance of ferroelectrics and FeFETs are given. Furthermore, methods of building FeFETs in different structures and physical models describing the characteristics of FeFET are introduced. Important applications of FeFETs in electronics and optoelectronics are presented, with a comparison of performance between FeFETs and FETs without ferroelectrics, including memories and memristive devices, photodetectors, negative capacitance FETs, sensors, and multifunctional devices. Finally, based on the above discussions, promising applications and challenges of FeFETs are summarized.

源语言英语
期刊论文编号011310
期刊Applied Physics Reviews
卷10
期1
DOI
出版状态已出版 - 3月 2023
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