Fabrication and electrical characteristics of the Pt/SiNWs/n-Si/Al Schottky diode structure

Meiguang Zhu; Jian Zhang; Huina Hou

doi:10.1016/j.mee.2012.02.009

Fabrication and electrical characteristics of the Pt/SiNWs/n-Si/Al Schottky diode structure

Meiguang Zhu
, Jian Zhang^*
, Huina Hou

^*此作品的通讯作者

通信与电子工程学院

Shanghai Precision Metrology and Testing Research Institute
East China Normal University

科研成果: 期刊稿件 › 文章 › 同行评审

4 引用（Scopus）

摘要

Array-ordered silicon nanowires (SiNWs) were fabricated directly on n-Si substrate by wet chemical etching. The electroless plating method was used to modify SiNWs with platinum (Pt) nanoparticles as the top electrodes, forming the novel tridimensional Pt/SiNWs/n-Si/Al Schottky diode structure. The structural and electrical characteristics were investigated to obtain the optimal experimental conditions for forming the Pt/SiNWs/n-Si/Al Schottky barrier diode structures. Three key electrical parameters (ideality factors, barrier heights and series resistance) are 11.58 eV, 0.93 eV and 1.99 kΩ, respectively. The study reveals that the Pt/SiNWs/n-Si/Al Schottky diode structure would have a great potential application in nanoscale optoelectronic devices by controlling the experimental parameters properly.

源语言	英语
页（从-至）	112-115
页数	4
期刊	Microelectronic Engineering
卷	95
DOI	https://doi.org/10.1016/j.mee.2012.02.009
出版状态	已出版 - 7月 2012

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10.1016/j.mee.2012.02.009

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@article{fcd5289e491944869c206b133dfdc7ee,

title = "Fabrication and electrical characteristics of the Pt/SiNWs/n-Si/Al Schottky diode structure",

abstract = "Array-ordered silicon nanowires (SiNWs) were fabricated directly on n-Si substrate by wet chemical etching. The electroless plating method was used to modify SiNWs with platinum (Pt) nanoparticles as the top electrodes, forming the novel tridimensional Pt/SiNWs/n-Si/Al Schottky diode structure. The structural and electrical characteristics were investigated to obtain the optimal experimental conditions for forming the Pt/SiNWs/n-Si/Al Schottky barrier diode structures. Three key electrical parameters (ideality factors, barrier heights and series resistance) are 11.58 eV, 0.93 eV and 1.99 kΩ, respectively. The study reveals that the Pt/SiNWs/n-Si/Al Schottky diode structure would have a great potential application in nanoscale optoelectronic devices by controlling the experimental parameters properly.",

keywords = "Optimal conditions, Pt/SiNWs, Schottky diode, Silicon nanowires",

author = "Meiguang Zhu and Jian Zhang and Huina Hou",

year = "2012",

month = jul,

doi = "10.1016/j.mee.2012.02.009",

language = "英语",

volume = "95",

pages = "112--115",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Fabrication and electrical characteristics of the Pt/SiNWs/n-Si/Al Schottky diode structure

AU - Zhu, Meiguang

AU - Zhang, Jian

AU - Hou, Huina

PY - 2012/7

Y1 - 2012/7

N2 - Array-ordered silicon nanowires (SiNWs) were fabricated directly on n-Si substrate by wet chemical etching. The electroless plating method was used to modify SiNWs with platinum (Pt) nanoparticles as the top electrodes, forming the novel tridimensional Pt/SiNWs/n-Si/Al Schottky diode structure. The structural and electrical characteristics were investigated to obtain the optimal experimental conditions for forming the Pt/SiNWs/n-Si/Al Schottky barrier diode structures. Three key electrical parameters (ideality factors, barrier heights and series resistance) are 11.58 eV, 0.93 eV and 1.99 kΩ, respectively. The study reveals that the Pt/SiNWs/n-Si/Al Schottky diode structure would have a great potential application in nanoscale optoelectronic devices by controlling the experimental parameters properly.

AB - Array-ordered silicon nanowires (SiNWs) were fabricated directly on n-Si substrate by wet chemical etching. The electroless plating method was used to modify SiNWs with platinum (Pt) nanoparticles as the top electrodes, forming the novel tridimensional Pt/SiNWs/n-Si/Al Schottky diode structure. The structural and electrical characteristics were investigated to obtain the optimal experimental conditions for forming the Pt/SiNWs/n-Si/Al Schottky barrier diode structures. Three key electrical parameters (ideality factors, barrier heights and series resistance) are 11.58 eV, 0.93 eV and 1.99 kΩ, respectively. The study reveals that the Pt/SiNWs/n-Si/Al Schottky diode structure would have a great potential application in nanoscale optoelectronic devices by controlling the experimental parameters properly.

KW - Optimal conditions

KW - Pt/SiNWs

KW - Schottky diode

KW - Silicon nanowires

UR - https://www.scopus.com/pages/publications/84860379952

U2 - 10.1016/j.mee.2012.02.009

DO - 10.1016/j.mee.2012.02.009

M3 - 文章

AN - SCOPUS:84860379952

SN - 0167-9317

VL - 95

SP - 112

EP - 115

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Fabrication and electrical characteristics of the Pt/SiNWs/n-Si/Al Schottky diode structure

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