@inproceedings{d485a367b2ce449d8bad66d8bdb142d7,
title = "Fabrication and characterization of 3D pn junction structure for radiation detection",
abstract = "In this report, p-type macroporous silicon has been prepared by anodization. A phosphorus diffusion step is employed for the formation of three dimensional pn junction structures on this macroporous silicon. I-V and C-V measurement were employed to characterize the electrical properties. The results were compared with numeric simulation with T-SUPREM4 and MEDICI. It has been demonstrated that three-dimensional structure can increase the effective junction area and the collective efficiency remarkably, and hence improve the performance of semiconductor radiation detector.",
keywords = "Anodization, Simulation, Three-dimension pn junction",
author = "Tingting Liu and Tao Liu and Jinlong Li and Jilei Lin and Xiaoming Chen and Xinglong Guo and Peisheng Xin and Shaohui Xu and Weijia Xue and Lianwei Wang",
year = "2008",
doi = "10.1117/12.792237",
language = "英语",
isbn = "9780819471826",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Sixth International Conference on Thin Film Physics and Applications",
note = "6th International Conference on Thin Film Physics and Applications, TFPA 2007 ; Conference date: 25-09-2007 Through 28-09-2007",
}