TY - JOUR
T1 - Exploring the impact of CH4 gas on crystallization behavior and interfacial structure in Mo/B4C multilayer films
T2 - A novel approach to thin-film engineering
AU - Li, Junjie
AU - Yuan, Yanyan
AU - Zhao, Jiaoling
AU - Tu, Yuchun
AU - Wang, Hu
AU - Cui, Yun
AU - Huang, Rong
AU - Yi, Kui
N1 - Publisher Copyright:
© 2025 Elsevier Inc.
PY - 2025/7
Y1 - 2025/7
N2 - Interface structure and crystallization behavior play an important role in the reflectivity of multilayer mirrors. In this study, Mo/B4C multilayers were prepared by magnetron sputtering technology with the introduction of CH4 gases to investigate crystallization behavior, interface diffusion, as well as interface roughness. The results indicate that the introduction of CH4 gases reduced the crystallinity of the Mo layers to some extent and altered the phase composition. All samples possessed a well-defined periodic structure. The Mo layer was primarily in a microcrystalline or amorphous state, thereby effectively reducing the interface roughness of the multilayer film. Additionally, with the introduction of CH4 gases, an interlayer of molybdenum carbide was formed at the B4C-on-Mo interface, effectively preventing interface diffusion between the layers.
AB - Interface structure and crystallization behavior play an important role in the reflectivity of multilayer mirrors. In this study, Mo/B4C multilayers were prepared by magnetron sputtering technology with the introduction of CH4 gases to investigate crystallization behavior, interface diffusion, as well as interface roughness. The results indicate that the introduction of CH4 gases reduced the crystallinity of the Mo layers to some extent and altered the phase composition. All samples possessed a well-defined periodic structure. The Mo layer was primarily in a microcrystalline or amorphous state, thereby effectively reducing the interface roughness of the multilayer film. Additionally, with the introduction of CH4 gases, an interlayer of molybdenum carbide was formed at the B4C-on-Mo interface, effectively preventing interface diffusion between the layers.
KW - Crystallization behavior
KW - Interface diffusion
KW - Magnetron sputtering
KW - Mo/BC
UR - https://www.scopus.com/pages/publications/105005596726
U2 - 10.1016/j.matchar.2025.115197
DO - 10.1016/j.matchar.2025.115197
M3 - 文章
AN - SCOPUS:105005596726
SN - 1044-5803
VL - 225
JO - Materials Characterization
JF - Materials Characterization
M1 - 115197
ER -