摘要
The write performance of flash memory has been degraded significantly due to the recent density-oriented advancements of flash technology. Techniques have been proposed to improve the write performance by exploiting the varying strength of a flash block in its different worn-out stages. A block is written with a faster speed when it is new and strong, and gradually will be written with slower speeds as it is aging and becomes weak. Motivated by these works, this brief proposes a new technique by exploiting the significant process variation among flash blocks introduced by the advanced technology scaling. First, a write speed detection approach is proposed to identify the strength of each block. Then, a heuristic approach is proposed to exploit the speed variation among blocks for write performance improvement. A series of trace-driven simulations shows that the proposed approach generates substantial write performance improvement over state-of-the-art approaches by 30% on average.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 7041199 |
| 页(从-至) | 334-337 |
| 页数 | 4 |
| 期刊 | IEEE Transactions on Very Large Scale Integration (VLSI) Systems |
| 卷 | 24 |
| 期 | 1 |
| DOI | |
| 出版状态 | 已出版 - 1月 2016 |
| 已对外发布 | 是 |
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探究 'Exploiting Process Variation for Write Performance Improvement on NAND Flash Memory Storage Systems' 的科研主题。它们共同构成独一无二的指纹。引用此
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