TY - GEN
T1 - Exploiting process variation for read performance improvement on LDPC based flash memory storage systems
AU - Li, Qiao
AU - Shi, Liang
AU - Di, Yejia
AU - Du, Yajuan
AU - Xue, Chun J.
AU - Sha, Edwin H.M.
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/11/22
Y1 - 2017/11/22
N2 - With the development of bit density and technology scaling, the process variation (PV) has become much severe on NAND flash memory. As PV presents reliability among flash blocks, which causes read performance variation to read data on different blocks. This paper proposes to improve read performance of LDPC based flash memory by exploiting the reliability characteristics of PV. First, a block grouping approach is proposed to classify the flash blocks based on their reliability. Then, a read data placement scheme is proposed, which is designed to place read-hot data on flash blocks with high reliability and move read-cold data to blocks with low reliability. Experiment results show that, with negligible overhead, the proposed scheme is able to significantly improve the read performance.
AB - With the development of bit density and technology scaling, the process variation (PV) has become much severe on NAND flash memory. As PV presents reliability among flash blocks, which causes read performance variation to read data on different blocks. This paper proposes to improve read performance of LDPC based flash memory by exploiting the reliability characteristics of PV. First, a block grouping approach is proposed to classify the flash blocks based on their reliability. Then, a read data placement scheme is proposed, which is designed to place read-hot data on flash blocks with high reliability and move read-cold data to blocks with low reliability. Experiment results show that, with negligible overhead, the proposed scheme is able to significantly improve the read performance.
UR - https://www.scopus.com/pages/publications/85041657300
U2 - 10.1109/ICCD.2017.118
DO - 10.1109/ICCD.2017.118
M3 - 会议稿件
AN - SCOPUS:85041657300
T3 - Proceedings - 35th IEEE International Conference on Computer Design, ICCD 2017
SP - 681
EP - 684
BT - Proceedings - 35th IEEE International Conference on Computer Design, ICCD 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 35th IEEE International Conference on Computer Design, ICCD 2017
Y2 - 5 November 2017 through 8 November 2017
ER -