Experimental verification on the origin of plateau-like current-voltage characteristics of resonant tunneling diodes

Z. J. Qiu; Y. S. Gui; S. L. Guo; N. Dai; J. H. Chu; X. X. Zhang; Y. P. Zeng

doi:10.1063/1.1682690

Experimental verification on the origin of plateau-like current-voltage characteristics of resonant tunneling diodes

Z. J. Qiu^*
, Y. S. Gui
, S. L. Guo
, N. Dai
, J. H. Chu
, X. X. Zhang
, Y. P. Zeng

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics
CAS - Institute of Semiconductors

科研成果: 期刊稿件 › 文章 › 同行评审

16 引用（Scopus）

摘要

The current-voltage characteristics of GaAs-based resonant tunneling diodes were investigated in the presence of a perpendicular magnetic field. It was observed that the electron resonant tunneling was strongly suppressed by the applied magnetic field. The current instability were also observed in the negative differential resistance (NDR) and was attributed to current oscillations between device and external circuit. It was found that the plateau-like structures were due to the coupling between the energy levels in the emitter well and in the main quantum well.

源语言	英语
页（从-至）	1961-1963
页数	3
期刊	Applied Physics Letters
卷	84
期	11
DOI	https://doi.org/10.1063/1.1682690
出版状态	已出版 - 15 3月 2004
已对外发布	是

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abstract = "The current-voltage characteristics of GaAs-based resonant tunneling diodes were investigated in the presence of a perpendicular magnetic field. It was observed that the electron resonant tunneling was strongly suppressed by the applied magnetic field. The current instability were also observed in the negative differential resistance (NDR) and was attributed to current oscillations between device and external circuit. It was found that the plateau-like structures were due to the coupling between the energy levels in the emitter well and in the main quantum well.",

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AU - Qiu, Z. J.

AU - Gui, Y. S.

AU - Guo, S. L.

AU - Dai, N.

AU - Chu, J. H.

AU - Zhang, X. X.

AU - Zeng, Y. P.

PY - 2004/3/15

Y1 - 2004/3/15

N2 - The current-voltage characteristics of GaAs-based resonant tunneling diodes were investigated in the presence of a perpendicular magnetic field. It was observed that the electron resonant tunneling was strongly suppressed by the applied magnetic field. The current instability were also observed in the negative differential resistance (NDR) and was attributed to current oscillations between device and external circuit. It was found that the plateau-like structures were due to the coupling between the energy levels in the emitter well and in the main quantum well.

AB - The current-voltage characteristics of GaAs-based resonant tunneling diodes were investigated in the presence of a perpendicular magnetic field. It was observed that the electron resonant tunneling was strongly suppressed by the applied magnetic field. The current instability were also observed in the negative differential resistance (NDR) and was attributed to current oscillations between device and external circuit. It was found that the plateau-like structures were due to the coupling between the energy levels in the emitter well and in the main quantum well.

UR - https://www.scopus.com/pages/publications/1842788516

U2 - 10.1063/1.1682690

DO - 10.1063/1.1682690

M3 - 文章

AN - SCOPUS:1842788516

SN - 0003-6951

VL - 84

SP - 1961

EP - 1963

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Experimental verification on the origin of plateau-like current-voltage characteristics of resonant tunneling diodes

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