Experimental study of the spin-orbit quantum interference effect in a high-mobility Inx Ga1-x As/InP quantum well structure with strong spin-orbit interaction

The quantum interference corrections to magnetoconductivity were studied experimentally in a gated high-mobility Inx Ga1-x As/InP quantum well structure with strong spin-orbit interaction. The phase-breaking time and spin splitting were extracted by fitting the experimental data using a recent model, which is applicable to arbitrarily strong spin-orbit coupling and magnetic field. It is experimentally verified that this model satisfactorily describes the data over a large range of magnetic fields extended from diffusion to nondiffusion regimes. The obtained dependencies of the phase-breaking and spin-relaxation time constants vs temperature and the gate voltage are in good agreement with existing theoretical predictions.