Excellent insulating behavior Al₂O₃ thin films grown by atomic layer deposition efficiently at room temperature

Al₂O₃ thin films were deposited at room temperature by atomic layer deposition (ALD) method with trimethylaluminum and ozone. The deposition velocity can be improved two orders of magnitude with the using of O₃ instead of H₂O. The Al₂O₃ films surface are atomically smooth. It was found that there are much less defects density in the O₃-based Al₂O₃ film than H₂O-based one. The O3-based Al₂O₃ film shows excellent insulating behavior and the breakdown field is about 7 MV/cm. These results prove the superior quality of the O₃-based film, which is suitable for microelectronic devices.