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Evolution of microstructure and related properties of PbZr0.4 Ti0.6 O3 films on F-doped tin oxide with annealing temperature

  • T. Zhang*
  • , G. J. Hu
  • , H. J. Bu
  • , J. Wu
  • , J. H. Chu
  • , N. Dai
  • *此作品的通讯作者
  • CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件文章同行评审

摘要

PbZr0.4 Ti0.6 O3 films were fabricated on glass slices coated with a layer of F-doped transparent conductive tin oxide layer by chemical solution deposition. The evolution of microstructures and related properties of the PbZr0.4 Ti0.6 O3 films with annealing temperature were studied. The films show a perovskite phase and a crack-free surface morphology. The films annealed at >550 °C display a distinguishable layered structure consisting of dense and porous PbZr0.4 Ti0.6 O3 layers. The sample treated at 650 °C exhibits the largest average remanent polarization of 29.2 μC/ cm2 and peak reflectivity of 95% among the films. 650 °C appears to be the best processing condition for the growth of PbZr0.4 Ti0.6 O3 multilayers with excellent ferroelectric and optical properties on F-doped tin oxide thin films.

源语言英语
文章编号084103
期刊Journal of Applied Physics
107
8
DOI
出版状态已出版 - 15 4月 2010
已对外发布

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