Evolution of Filament Formation in Ni/HfO2/SiOx/Si-Based RRAM Devices

Xing Wu; Sen Mei; Michel Bosman; Nagarajan Raghavan; Xixiang Zhang; Dongkyu Cha; Kun Li; Kin Leong Pey

doi:10.1002/aelm.201500130

Evolution of Filament Formation in Ni/HfO₂/SiO_x/Si-Based RRAM Devices

Xing Wu
, Sen Mei
, Michel Bosman
, Nagarajan Raghavan
, Xixiang Zhang
, Dongkyu Cha
, Kun Li
, Kin Leong Pey^*

^*此作品的通讯作者

信息与电子工程学院（集成电路科学与工程学院）

Singapore University of Technology and Design
Agency for Science, Technology and Research, Singapore
King Abdullah University of Science and Technology

科研成果: 期刊稿件 › 文章 › 同行评审

58 引用（Scopus）

源语言	英语
期刊论文编号	1500130
期刊	Advanced Electronic Materials
卷	1
期	11
DOI	https://doi.org/10.1002/aelm.201500130
出版状态	已出版 - 11月 2015

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10.1002/aelm.201500130

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引用此

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title = "Evolution of Filament Formation in Ni/HfO2/SiOx/Si-Based RRAM Devices",

keywords = "energy dispersive X-ray spectrometry, in situ transmission electron microscopy, metal nanofilaments, resistive random access memory",

author = "Xing Wu and Sen Mei and Michel Bosman and Nagarajan Raghavan and Xixiang Zhang and Dongkyu Cha and Kun Li and Pey, \{Kin Leong\}",

year = "2015",

month = nov,

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AU - Wu, Xing

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AU - Bosman, Michel

AU - Raghavan, Nagarajan

AU - Zhang, Xixiang

AU - Cha, Dongkyu

AU - Li, Kun

AU - Pey, Kin Leong

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KW - energy dispersive X-ray spectrometry

KW - in situ transmission electron microscopy

KW - metal nanofilaments

KW - resistive random access memory

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DO - 10.1002/aelm.201500130

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SN - 2199-160X

VL - 1

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

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