Erratum to "Gate-controlled electron-electron interactions in an In0 : 53 Ga0 : 47 As/InP quantum well structure" [Solid State Commun. 150 (2010) 251-253] (DOI:10.1016/j.ssc.2009.11.016)

Y. M. Zhou; K. H. Gao; G. Yu; W. Z. Zhou; T. Lin; S. L. Guo; J. H. Chu; N. Dai

doi:10.1016/j.ssc.2010.02.003

Erratum to "Gate-controlled electron-electron interactions in an In_{0 : 53} Ga_{0 : 47} As/InP quantum well structure" [Solid State Commun. 150 (2010) 251-253] (DOI:10.1016/j.ssc.2009.11.016)

Y. M. Zhou
, K. H. Gao
, G. Yu^*
, W. Z. Zhou
, T. Lin
, S. L. Guo
, J. H. Chu
, N. Dai

^*此作品的通讯作者

科研成果: 期刊稿件 › 评论/辩论

源语言	英语
页（从-至）	901
页数	1
期刊	Solid State Communications
卷	150
期	17-18
DOI	https://doi.org/10.1016/j.ssc.2010.02.003
出版状态	已出版 - 5月 2010
已对外发布	是

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10.1016/j.ssc.2010.02.003

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引用此

Zhou, Y. M., Gao, K. H., Yu, G., Zhou, W. Z., Lin, T., Guo, S. L., Chu, J. H., & Dai, N. (2010). Erratum to "Gate-controlled electron-electron interactions in an In_{0 : 53} Ga_{0 : 47} As/InP quantum well structure" [Solid State Commun. 150 (2010) 251-253] (DOI:10.1016/j.ssc.2009.11.016). Solid State Communications, 150(17-18), 901. https://doi.org/10.1016/j.ssc.2010.02.003

@article{02bd89d2987a4b61bb47f80dcf3b3353,

title = "Erratum to {"}Gate-controlled electron-electron interactions in an In0 : 53 Ga0 : 47 As/InP quantum well structure{"} [Solid State Commun. 150 (2010) 251-253] (DOI:10.1016/j.ssc.2009.11.016)",

author = "Zhou, \{Y. M.\} and Gao, \{K. H.\} and G. Yu and Zhou, \{W. Z.\} and T. Lin and Guo, \{S. L.\} and Chu, \{J. H.\} and N. Dai",

year = "2010",

month = may,

doi = "10.1016/j.ssc.2010.02.003",

language = "英语",

volume = "150",

pages = "901",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "17-18",

}

Zhou, YM, Gao, KH, Yu, G, Zhou, WZ, Lin, T, Guo, SL, Chu, JH & Dai, N 2010, 'Erratum to "Gate-controlled electron-electron interactions in an In_{0 : 53} Ga_{0 : 47} As/InP quantum well structure" [Solid State Commun. 150 (2010) 251-253] (DOI:10.1016/j.ssc.2009.11.016)', Solid State Communications, 卷 150, 号码 17-18, 页码 901. https://doi.org/10.1016/j.ssc.2010.02.003

TY - JOUR

T1 - Erratum to "Gate-controlled electron-electron interactions in an In0 : 53 Ga0 : 47 As/InP quantum well structure" [Solid State Commun. 150 (2010) 251-253] (DOI:10.1016/j.ssc.2009.11.016)

AU - Zhou, Y. M.

AU - Gao, K. H.

AU - Yu, G.

AU - Zhou, W. Z.

AU - Lin, T.

AU - Guo, S. L.

AU - Chu, J. H.

AU - Dai, N.

PY - 2010/5

Y1 - 2010/5

UR - https://www.scopus.com/pages/publications/77949487320

U2 - 10.1016/j.ssc.2010.02.003

DO - 10.1016/j.ssc.2010.02.003

M3 - 评论/辩论

AN - SCOPUS:77949487320

SN - 0038-1098

VL - 150

SP - 901

JO - Solid State Communications

JF - Solid State Communications

IS - 17-18

ER -