Erratum: Mechanism of the performance improvement of TiO 2-x-based field-effect transistor using SiO2 as gate insulator (AIP Advances (2011) 1 (032167))

Ni Zhong; Hisashi Shima; Hiro Akinaga

doi:10.1063/1.3660334

Erratum: Mechanism of the performance improvement of TiO _2-x-based field-effect transistor using SiO₂ as gate insulator (AIP Advances (2011) 1 (032167))

Ni Zhong^*
, Hisashi Shima
, Hiro Akinaga

^*此作品的通讯作者

National Institute of Advanced Industrial Science and Technology
Japan Science and Technology Agency

科研成果: 期刊稿件 › 评论/辩论

源语言	英语
文章编号	49902
期刊	AIP Advances
卷	1
期	4
DOI	https://doi.org/10.1063/1.3660334
出版状态	已出版 - 12月 2011
已对外发布	是

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10.1063/1.3660334

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引用此

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