摘要
Recently, vanadium diselenide (VSe2), a member of transition metal dichalcogenides, has attracted a great deal of interest in spintronic devices and memory devices due to its unique physical properties. However, it is still a challenge to prepare a continuous VSe2 thin film which is critical for its potential application. Here, we report a continuous single-crystalline 1T-VSe2 thin film grown on mica by pulsed laser deposition. Both x-ray diffraction and high-resolution transmission electron microscopy verify the van der Waals epitaxy of the VSe2/mica heterostructure. Free-standing and flexible VSe2 thin films can be obtained and combined with integrated circuit technology, which is of great significance for the application of two-dimensional materials in the field of multifunctional flexible electronic devices.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 035302 |
| 期刊 | Journal of Applied Physics |
| 卷 | 133 |
| 期 | 3 |
| DOI | |
| 出版状态 | 已出版 - 21 1月 2023 |
| 已对外发布 | 是 |
指纹
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