Enhancement and anisotropy of the Landau g factor in modulation-doped Al0.22Ga0.78N/GaN heterostructures

Z. W. Zheng; B. Shen; Y. S. Gui; Z. J. Qiu; C. P. Jiang; N. Tang; J. Liu; D. J. Chen; H. M. Zhou; R. Zhang; Y. Shi; Y. D. Zheng; S. L. Quo; J. H. Chu; K. Hoshino; Y. Arakawa

doi:10.1063/1.1642732

Enhancement and anisotropy of the Landau g factor in modulation-doped Al_0.22Ga_0.78N/GaN heterostructures

Z. W. Zheng
, B. Shen^*
, Y. S. Gui
, Z. J. Qiu
, C. P. Jiang
, N. Tang
, J. Liu
, D. J. Chen
, H. M. Zhou
, R. Zhang
, Y. Shi
, Y. D. Zheng
, S. L. Quo
, J. H. Chu
, K. Hoshino
, Y. Arakawa

^*此作品的通讯作者

Nanjing University
CAS - Shanghai Institute of Technical Physics
The University of Tokyo

科研成果: 期刊稿件 › 文章 › 同行评审

3 引用（Scopus）

摘要

The spin splitting study of the two-dimensional electron gas (2DEG) for analyzing the enhancement and anisotropy of the Landau g factor in modulation-doped AlGaN/GaN heterostructures was presented. The study measured the magnetotransport properties at low temperatures and high magnetic fields. At magnetic field higher than 5.4 T and a temperature of 1.4 K, the spin splitting was observed in Shubnikov-de Hass oscillations. The ratio of the transverse effective and longitudinal effective g factor indicated large differences between the transverse and longitudinal g factors. The polarization-induced electric field at the heterointerface was found to be the cause behind the anisotropy of the Landau g factor.

源语言	英语
页（从-至）	2473-2476
页数	4
期刊	Journal of Applied Physics
卷	95
期	5
DOI	https://doi.org/10.1063/1.1642732
出版状态	已出版 - 1 3月 2004
已对外发布	是

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Zheng, Z. W., Shen, B., Gui, Y. S., Qiu, Z. J., Jiang, C. P., Tang, N., Liu, J., Chen, D. J., Zhou, H. M., Zhang, R., Shi, Y., Zheng, Y. D., Quo, S. L., Chu, J. H., Hoshino, K., & Arakawa, Y. (2004). Enhancement and anisotropy of the Landau g factor in modulation-doped Al_0.22Ga_0.78N/GaN heterostructures. Journal of Applied Physics, 95(5), 2473-2476. https://doi.org/10.1063/1.1642732

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title = "Enhancement and anisotropy of the Landau g factor in modulation-doped Al0.22Ga0.78N/GaN heterostructures",

abstract = "The spin splitting study of the two-dimensional electron gas (2DEG) for analyzing the enhancement and anisotropy of the Landau g factor in modulation-doped AlGaN/GaN heterostructures was presented. The study measured the magnetotransport properties at low temperatures and high magnetic fields. At magnetic field higher than 5.4 T and a temperature of 1.4 K, the spin splitting was observed in Shubnikov-de Hass oscillations. The ratio of the transverse effective and longitudinal effective g factor indicated large differences between the transverse and longitudinal g factors. The polarization-induced electric field at the heterointerface was found to be the cause behind the anisotropy of the Landau g factor.",

author = "Zheng, \{Z. W.\} and B. Shen and Gui, \{Y. S.\} and Qiu, \{Z. J.\} and Jiang, \{C. P.\} and N. Tang and J. Liu and Chen, \{D. J.\} and Zhou, \{H. M.\} and R. Zhang and Y. Shi and Zheng, \{Y. D.\} and Quo, \{S. L.\} and Chu, \{J. H.\} and K. Hoshino and Y. Arakawa",

year = "2004",

month = mar,

day = "1",

doi = "10.1063/1.1642732",

language = "英语",

volume = "95",

pages = "2473--2476",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "5",

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TY - JOUR

T1 - Enhancement and anisotropy of the Landau g factor in modulation-doped Al0.22Ga0.78N/GaN heterostructures

AU - Zheng, Z. W.

AU - Shen, B.

AU - Gui, Y. S.

AU - Qiu, Z. J.

AU - Jiang, C. P.

AU - Tang, N.

AU - Liu, J.

AU - Chen, D. J.

AU - Zhou, H. M.

AU - Zhang, R.

AU - Shi, Y.

AU - Zheng, Y. D.

AU - Quo, S. L.

AU - Chu, J. H.

AU - Hoshino, K.

AU - Arakawa, Y.

PY - 2004/3/1

Y1 - 2004/3/1

N2 - The spin splitting study of the two-dimensional electron gas (2DEG) for analyzing the enhancement and anisotropy of the Landau g factor in modulation-doped AlGaN/GaN heterostructures was presented. The study measured the magnetotransport properties at low temperatures and high magnetic fields. At magnetic field higher than 5.4 T and a temperature of 1.4 K, the spin splitting was observed in Shubnikov-de Hass oscillations. The ratio of the transverse effective and longitudinal effective g factor indicated large differences between the transverse and longitudinal g factors. The polarization-induced electric field at the heterointerface was found to be the cause behind the anisotropy of the Landau g factor.

AB - The spin splitting study of the two-dimensional electron gas (2DEG) for analyzing the enhancement and anisotropy of the Landau g factor in modulation-doped AlGaN/GaN heterostructures was presented. The study measured the magnetotransport properties at low temperatures and high magnetic fields. At magnetic field higher than 5.4 T and a temperature of 1.4 K, the spin splitting was observed in Shubnikov-de Hass oscillations. The ratio of the transverse effective and longitudinal effective g factor indicated large differences between the transverse and longitudinal g factors. The polarization-induced electric field at the heterointerface was found to be the cause behind the anisotropy of the Landau g factor.

UR - https://www.scopus.com/pages/publications/12144287863

U2 - 10.1063/1.1642732

DO - 10.1063/1.1642732

M3 - 文章

AN - SCOPUS:12144287863

SN - 0021-8979

VL - 95

SP - 2473

EP - 2476

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Enhancement and anisotropy of the Landau g factor in modulation-doped Al0.22Ga0.78N/GaN heterostructures

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Enhancement and anisotropy of the Landau g factor in modulation-doped Al_0.22Ga_0.78N/GaN heterostructures