Enhanced the performance of CZTSSe solar cells by optimized i:ZnO window layer

Jiaqi Chen; Bin Xu; Hai Ma; Hanyu Tong; Long Zou; Pingxiong Yang; Junhao Chu; Lin Sun; Ye Chen

doi:10.1016/j.mssp.2023.107993

Enhanced the performance of CZTSSe solar cells by optimized i:ZnO window layer

Jiaqi Chen
, Bin Xu^*
, Hai Ma
, Hanyu Tong
, Long Zou
, Pingxiong Yang
, Junhao Chu
, Lin Sun
, Ye Chen^*

^*此作品的通讯作者

物理与电子科学学院

科研成果: 期刊稿件 › 文章 › 同行评审

4 引用（Scopus）

摘要

We have systematically investigated the effect of i:ZnO window layer with different thickness on the performance of CZTSSe solar cells. The i:ZnO films were deposited on SLG substrate by adjusting the supttering time, and the accurate thickness was determined by XRR spectra. GIXRD, AFM images and absorption spectra show that the crystalline quality is stable and increases with the increase of thickness, while transmittivity declines. Furthermore, CZTSSe solar cells with the structure of SLG/Mo/CZTSSe/CdS/i:ZnO/ITO/Al were fabricated. It is found that V_oc and FF of solar cell are affected by the thickness of i:ZnO layer obviously. The i:ZnO window layer plays an important role in reducing the channels of current leakage. Meanwhile, a compromise among the parallel conductance, series resistance and transmittivity are needed. By optimized the process, the efficiency of CZTSSe solar cell was significantly improved to 10.74 % when the thickness of i:ZnO was about 26 nm.

源语言	英语
文章编号	107993
期刊	Materials Science in Semiconductor Processing
卷	171
DOI	https://doi.org/10.1016/j.mssp.2023.107993
出版状态	已出版 - 1 3月 2024

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title = "Enhanced the performance of CZTSSe solar cells by optimized i:ZnO window layer",

abstract = "We have systematically investigated the effect of i:ZnO window layer with different thickness on the performance of CZTSSe solar cells. The i:ZnO films were deposited on SLG substrate by adjusting the supttering time, and the accurate thickness was determined by XRR spectra. GIXRD, AFM images and absorption spectra show that the crystalline quality is stable and increases with the increase of thickness, while transmittivity declines. Furthermore, CZTSSe solar cells with the structure of SLG/Mo/CZTSSe/CdS/i:ZnO/ITO/Al were fabricated. It is found that Voc and FF of solar cell are affected by the thickness of i:ZnO layer obviously. The i:ZnO window layer plays an important role in reducing the channels of current leakage. Meanwhile, a compromise among the parallel conductance, series resistance and transmittivity are needed. By optimized the process, the efficiency of CZTSSe solar cell was significantly improved to 10.74 \% when the thickness of i:ZnO was about 26 nm.",

keywords = "CuZnSn(S,Se), Current leakage channels, V-deficit, i:ZnO window layer",

author = "Jiaqi Chen and Bin Xu and Hai Ma and Hanyu Tong and Long Zou and Pingxiong Yang and Junhao Chu and Lin Sun and Ye Chen",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier Ltd",

year = "2024",

month = mar,

day = "1",

doi = "10.1016/j.mssp.2023.107993",

language = "英语",

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TY - JOUR

T1 - Enhanced the performance of CZTSSe solar cells by optimized i:ZnO window layer

AU - Chen, Jiaqi

AU - Xu, Bin

AU - Ma, Hai

AU - Tong, Hanyu

AU - Zou, Long

AU - Yang, Pingxiong

AU - Chu, Junhao

AU - Sun, Lin

AU - Chen, Ye

PY - 2024/3/1

Y1 - 2024/3/1

N2 - We have systematically investigated the effect of i:ZnO window layer with different thickness on the performance of CZTSSe solar cells. The i:ZnO films were deposited on SLG substrate by adjusting the supttering time, and the accurate thickness was determined by XRR spectra. GIXRD, AFM images and absorption spectra show that the crystalline quality is stable and increases with the increase of thickness, while transmittivity declines. Furthermore, CZTSSe solar cells with the structure of SLG/Mo/CZTSSe/CdS/i:ZnO/ITO/Al were fabricated. It is found that Voc and FF of solar cell are affected by the thickness of i:ZnO layer obviously. The i:ZnO window layer plays an important role in reducing the channels of current leakage. Meanwhile, a compromise among the parallel conductance, series resistance and transmittivity are needed. By optimized the process, the efficiency of CZTSSe solar cell was significantly improved to 10.74 % when the thickness of i:ZnO was about 26 nm.

AB - We have systematically investigated the effect of i:ZnO window layer with different thickness on the performance of CZTSSe solar cells. The i:ZnO films were deposited on SLG substrate by adjusting the supttering time, and the accurate thickness was determined by XRR spectra. GIXRD, AFM images and absorption spectra show that the crystalline quality is stable and increases with the increase of thickness, while transmittivity declines. Furthermore, CZTSSe solar cells with the structure of SLG/Mo/CZTSSe/CdS/i:ZnO/ITO/Al were fabricated. It is found that Voc and FF of solar cell are affected by the thickness of i:ZnO layer obviously. The i:ZnO window layer plays an important role in reducing the channels of current leakage. Meanwhile, a compromise among the parallel conductance, series resistance and transmittivity are needed. By optimized the process, the efficiency of CZTSSe solar cell was significantly improved to 10.74 % when the thickness of i:ZnO was about 26 nm.

KW - CuZnSn(S,Se)

KW - Current leakage channels

KW - V-deficit

KW - i:ZnO window layer

UR - https://www.scopus.com/pages/publications/85177828557

U2 - 10.1016/j.mssp.2023.107993

DO - 10.1016/j.mssp.2023.107993

M3 - 文章

AN - SCOPUS:85177828557

SN - 1369-8001

VL - 171

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

M1 - 107993

ER -

Enhanced the performance of CZTSSe solar cells by optimized i:ZnO window layer

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