Empirical All Region Current Based PHEMT DC Model

Jianjun Gao; Xiuping Li; Hong Wang; Georg Boeck

Empirical All Region Current Based PHEMT DC Model

Jianjun Gao^*
, Xiuping Li
, Hong Wang
, Georg Boeck

^*此作品的通讯作者

Technical University of Berlin
Nanyang Technological University

科研成果: 会议稿件 › 论文 › 同行评审

2 引用（Scopus）

摘要

This paper proposes an improved PHEMT DC model which covers high and low current applications, as well good agreement is obtained between simulated and measured results for a 0.25(1 × 40) μm double heterostructure PHEMT.

源语言	英语
页	99-101
页数	3
出版状态	已出版 - 2003
已对外发布	是
活动	2003 SMBO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003 - Foz do Iguacu, 巴西期限: 20 9月 2003 → 23 9月 2003

会议

会议	2003 SMBO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003
国家/地区	巴西
市	Foz do Iguacu
时期	20/09/03 → 23/09/03

其它文件与链接

链接到 Scopus 的出版物

引用此

@conference{cdee8a45b6104d199e410e9db28e71f1,

title = "Empirical All Region Current Based PHEMT DC Model",

abstract = "This paper proposes an improved PHEMT DC model which covers high and low current applications, as well good agreement is obtained between simulated and measured results for a 0.25(1 × 40) μm double heterostructure PHEMT.",

keywords = "DC model, Equivalent circuits, PHEMT device",

author = "Jianjun Gao and Xiuping Li and Hong Wang and Georg Boeck",

year = "2003",

language = "英语",

pages = "99--101",

note = "2003 SMBO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003 ; Conference date: 20-09-2003 Through 23-09-2003",

}

TY - CONF

T1 - Empirical All Region Current Based PHEMT DC Model

AU - Gao, Jianjun

AU - Li, Xiuping

AU - Wang, Hong

AU - Boeck, Georg

PY - 2003

Y1 - 2003

N2 - This paper proposes an improved PHEMT DC model which covers high and low current applications, as well good agreement is obtained between simulated and measured results for a 0.25(1 × 40) μm double heterostructure PHEMT.

AB - This paper proposes an improved PHEMT DC model which covers high and low current applications, as well good agreement is obtained between simulated and measured results for a 0.25(1 × 40) μm double heterostructure PHEMT.

KW - DC model

KW - Equivalent circuits

KW - PHEMT device

UR - https://www.scopus.com/pages/publications/1642281025

M3 - 论文

AN - SCOPUS:1642281025

SP - 99

EP - 101

T2 - 2003 SMBO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003

Y2 - 20 September 2003 through 23 September 2003

ER -

Empirical All Region Current Based PHEMT DC Model

摘要

会议

其它文件与链接

指纹

引用此