Emitter-Length Scalable Small Signal and Noise Modeling for InP Heterojunction Bipolar Transistors

Ao Zhang; Jianjun Gao

doi:10.1109/ACCESS.2019.2893613

Emitter-Length Scalable Small Signal and Noise Modeling for InP Heterojunction Bipolar Transistors

Ao Zhang
, Jianjun Gao^*

^*此作品的通讯作者

物理与电子科学学院

East China Normal University

科研成果: 期刊稿件 › 文章 › 同行评审

5 引用（Scopus）

摘要

In this paper, an emitter-length scalable noise and small signal model for InP heterojunction bipolar transistor (HBT) are presented. A set of scalable expressions for noise parameters based on hybrid-π topology in the low-frequency ranges are derived. The analytical and experimental results show that under the same bias condition, good emitter-length scaling of the noise and small signal model parameters can be achieved between 1.6 μm × 10 μm, 1.6 μm × 20 μm and 1.6 μm × 30 μm InP HBTs.

源语言	英语
文章编号	8618445
页（从-至）	13939-13944
页数	6
期刊	IEEE Access
卷	7
DOI	https://doi.org/10.1109/ACCESS.2019.2893613
出版状态	已出版 - 2019

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title = "Emitter-Length Scalable Small Signal and Noise Modeling for InP Heterojunction Bipolar Transistors",

abstract = "In this paper, an emitter-length scalable noise and small signal model for InP heterojunction bipolar transistor (HBT) are presented. A set of scalable expressions for noise parameters based on hybrid-π topology in the low-frequency ranges are derived. The analytical and experimental results show that under the same bias condition, good emitter-length scaling of the noise and small signal model parameters can be achieved between 1.6 μm × 10 μm, 1.6 μm × 20 μm and 1.6 μm × 30 μm InP HBTs.",

keywords = "Equivalent circuits, HBT, noise modeling, parameter extraction, semiconductor device modeling",

author = "Ao Zhang and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.",

year = "2019",

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AU - Zhang, Ao

AU - Gao, Jianjun

PY - 2019

Y1 - 2019

N2 - In this paper, an emitter-length scalable noise and small signal model for InP heterojunction bipolar transistor (HBT) are presented. A set of scalable expressions for noise parameters based on hybrid-π topology in the low-frequency ranges are derived. The analytical and experimental results show that under the same bias condition, good emitter-length scaling of the noise and small signal model parameters can be achieved between 1.6 μm × 10 μm, 1.6 μm × 20 μm and 1.6 μm × 30 μm InP HBTs.

AB - In this paper, an emitter-length scalable noise and small signal model for InP heterojunction bipolar transistor (HBT) are presented. A set of scalable expressions for noise parameters based on hybrid-π topology in the low-frequency ranges are derived. The analytical and experimental results show that under the same bias condition, good emitter-length scaling of the noise and small signal model parameters can be achieved between 1.6 μm × 10 μm, 1.6 μm × 20 μm and 1.6 μm × 30 μm InP HBTs.

KW - Equivalent circuits

KW - HBT

KW - noise modeling

KW - parameter extraction

KW - semiconductor device modeling

UR - https://www.scopus.com/pages/publications/85061724958

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JO - IEEE Access

JF - IEEE Access

M1 - 8618445

ER -

Emitter-Length Scalable Small Signal and Noise Modeling for InP Heterojunction Bipolar Transistors

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