跳到主要导航 跳到搜索 跳到主要内容

Electrothermal Model Parameters Extraction and Evaluation Based on BSIM-CMG for 7-nm Nanosheet Gate-All-Around Transistor

  • East China Normal University

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

In this paper, the BSIM-CMG model parameters are extracted for the nanosheet gate-AlI-Around (GAA) transistors with considering the temperature distribution and self-heating (SH) effect. The data used for parameter extraction is obtained from the 3-D TCAD simulation, which is calibrated with the experimental data to ensure the analysis accuracy. The extracted model and its parameter are validated from-40°C to 125°C. In order to evaluate our extracted model, the performance of the 6T-SRAM is investigated considering SH effect within different ambient temperature (TA). The results show that the read and write noise margins are all degenerated with increasing TA, and the static power increases as expected.

源语言英语
主期刊名2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings
编辑Shaofeng Yu, Xiaona Zhu, Ting-Ao Tang
出版商Institute of Electrical and Electronics Engineers Inc.
ISBN(电子版)9781728162355
DOI
出版状态已出版 - 3 11月 2020
活动15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Virtual, Kunming, 中国
期限: 3 11月 20206 11月 2020

出版系列

姓名2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings

会议

会议15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020
国家/地区中国
Virtual, Kunming
时期3/11/206/11/20

指纹

探究 'Electrothermal Model Parameters Extraction and Evaluation Based on BSIM-CMG for 7-nm Nanosheet Gate-All-Around Transistor' 的科研主题。它们共同构成独一无二的指纹。

引用此