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Electronic transitions and hybrid resonance in InAsSb films by reflectance spectra

  • H. Y. Deng
  • , Q. W. Wang
  • , J. Y. He
  • , C. H. Sun
  • , S. H. Hu
  • , X. Chen
  • , N. Dai
  • CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件文章同行评审

摘要

Electronic properties of InAs1-xSbx films with x up to 0.09 have been investigated by reflectance spectra in 1.5-5 eV energy range at room temperature. The real and imaginary parts of the dielectric function were derived by Kramers-Kronig analysis on the reflectance spectra, which show satisfactory agreement with the spectroscopic ellipsometry data. The E 1′ and E 1′ + Δ 1′ peaks are attributed to electronic interband transitions at the E1 and E1 + Δ1 critical points, respectively. The prominent E 2′ peaks, which exhibit high reflectivity and large blueshift, are found to be contributed by hybrid resonance due to the cooperative behavior of both E2 -state electrons and plasmons.

源语言英语
文章编号151910
期刊Applied Physics Letters
97
15
DOI
出版状态已出版 - 11 10月 2010
已对外发布

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