跳到主要导航 跳到搜索 跳到主要内容

Electronic bandgap manipulation of monolayer WS2 by vertically coupled insulated Mg(OH)2 layers

  • Fang Wang
  • , Anyang Cui
  • , Huimin Sun
  • , Bin Zhou
  • , Liping Xu
  • , Kai Jiang
  • , Liyan Shang
  • , Zhigao Hu*
  • , Junhao Chu
  • *此作品的通讯作者
  • East China Normal University
  • Shanxi University

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

Searching for novel two-dimensional (2D) materials with tunable electrical and optical properties is significant to develop next-generation multifunctional nanoscale optoelectronic devices. The new insulated Mg(OH)2 is a promising and stable 2D material to construct heterojunction with transition metal dichalcogenides (TMDs). Here, WS2-Mg(OH)2 is experimentally designed and investigated. The similarity of lattice constants for the two materials is confirmed with selected area electron diffraction for the first time. By stacking Mg(OH)2 layers on WS2 monolayer, the Fermi level of WS2 is distinctly elevated, making the WS2-Mg(OH)2 a promising heterostructure for constructing and optimizing tunable electronic devices. We also showed the adjustable transition properties with enhanced coupling effect by thinning the Mg(OH)2 layers in the heterostructure. This study not only demonstrates the tunable Fermi levels and optical characteristics of WS2-Mg(OH)2, but also could promote the broad investigations of novel 2D materials for various optoelectronic device applications in nanoscale.

源语言英语
页(从-至)156-162
页数7
期刊Journal of Alloys and Compounds
卷785
DOI
出版状态已出版 - 15 5月 2019

学术指纹

探究 'Electronic bandgap manipulation of monolayer WS2 by vertically coupled insulated Mg(OH)2 layers' 的科研主题。它们共同构成独一无二的学术指纹。

引用此