Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor

Variable magnetic-field Hall measurement has been used to investigate the transport properties in the double-heterostructure pseudomorphic high-electron-mobility transistor in the temperature range from 1.6 to 240 K. The experimental data have been analyzed by using a hybrid approach consisting of the mobility spectrum (MS) technique followed by a multicarrier fitting (MCF) procedure. Both the Shubnikov-de Haas measurements and the hybrid MS + MCF approach agree well with the theoretical calculations. The resulting temperature dependence of mobility and concentration for ground subbands and excited subbands shows that the excited subbands play an important role in the observed transport behavior.