Electron injection of SrTiO3/Si interfacial layer

J. H. Ma; J. L. Sun; J. H. Qin; Y. H. Gao; T. Lin; H. Shen; F. W. Shi; X. J. Meng; J. H. Chu; S. J. Liu; J. Li

doi:10.1063/1.2980019

Electron injection of SrTiO₃/Si interfacial layer

J. H. Ma
, J. L. Sun
, J. H. Qin
, Y. H. Gao
, T. Lin
, H. Shen
, F. W. Shi
, X. J. Meng
, J. H. Chu
, S. J. Liu
, J. Li

CAS - Shanghai Institute of Technical Physics
Shanghai Normal University
Beijing Institute of Technology

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

The electrical properties of the SrTi O3 (STO) Si interfacial layer were studied by measuring STO metal-insulator-semiconductor (MIS) structure. The C-V measurements showed that there existed electron injection at the STO/Si interface under the higher sweep voltages. The electron injection behavior was analyzed and discussed in detail. By analyzing the voltage distribution of the semiconductor Si, the insulator STO, and the STO/Si interfacial layer in MIS structure, the electron injection electric field of interfacial layer was estimated to be about 5.5 MVcm.

源语言	英语
文章编号	102903
期刊	Applied Physics Letters
卷	93
期	10
DOI	https://doi.org/10.1063/1.2980019
出版状态	已出版 - 2008
已对外发布	是

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title = "Electron injection of SrTiO3/Si interfacial layer",

abstract = "The electrical properties of the SrTi O3 (STO) Si interfacial layer were studied by measuring STO metal-insulator-semiconductor (MIS) structure. The C-V measurements showed that there existed electron injection at the STO/Si interface under the higher sweep voltages. The electron injection behavior was analyzed and discussed in detail. By analyzing the voltage distribution of the semiconductor Si, the insulator STO, and the STO/Si interfacial layer in MIS structure, the electron injection electric field of interfacial layer was estimated to be about 5.5 MVcm.",

author = "Ma, \{J. H.\} and Sun, \{J. L.\} and Qin, \{J. H.\} and Gao, \{Y. H.\} and T. Lin and H. Shen and Shi, \{F. W.\} and Meng, \{X. J.\} and Chu, \{J. H.\} and Liu, \{S. J.\} and J. Li",

year = "2008",

doi = "10.1063/1.2980019",

language = "英语",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

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TY - JOUR

T1 - Electron injection of SrTiO3/Si interfacial layer

AU - Ma, J. H.

AU - Sun, J. L.

AU - Qin, J. H.

AU - Gao, Y. H.

AU - Lin, T.

AU - Shen, H.

AU - Shi, F. W.

AU - Meng, X. J.

AU - Chu, J. H.

AU - Liu, S. J.

AU - Li, J.

PY - 2008

Y1 - 2008

N2 - The electrical properties of the SrTi O3 (STO) Si interfacial layer were studied by measuring STO metal-insulator-semiconductor (MIS) structure. The C-V measurements showed that there existed electron injection at the STO/Si interface under the higher sweep voltages. The electron injection behavior was analyzed and discussed in detail. By analyzing the voltage distribution of the semiconductor Si, the insulator STO, and the STO/Si interfacial layer in MIS structure, the electron injection electric field of interfacial layer was estimated to be about 5.5 MVcm.

AB - The electrical properties of the SrTi O3 (STO) Si interfacial layer were studied by measuring STO metal-insulator-semiconductor (MIS) structure. The C-V measurements showed that there existed electron injection at the STO/Si interface under the higher sweep voltages. The electron injection behavior was analyzed and discussed in detail. By analyzing the voltage distribution of the semiconductor Si, the insulator STO, and the STO/Si interfacial layer in MIS structure, the electron injection electric field of interfacial layer was estimated to be about 5.5 MVcm.

UR - https://www.scopus.com/pages/publications/51749091506

U2 - 10.1063/1.2980019

DO - 10.1063/1.2980019

M3 - 文章

AN - SCOPUS:51749091506

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 102903

ER -

Electron injection of SrTiO3/Si interfacial layer

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Electron injection of SrTiO₃/Si interfacial layer