Electrode-contact enhancement in silicon nanowire-array-textured solar cells

In the case of the silicon (Si) nanowire (NW)-array-textured solar cells, the electrode-contact enhancement has been achieved using a simple and convenient double-step diffusion process to form a highly doped N⁺ region at the tips of a Si-NW array. The series resistance can be effectively reduced, leading to an increase in the short-circuit current density in the cell. We have studied the physical mechanism of the impact of an increase in doping level at the tips of a Si-NW array on the electrode-contact property, which would benefit in realizing an improvement in cell performance in such a nanostructure solar cell.