Electrical characteristics of SrBi2Ta2O9 thin films prepared by pulsed laser deposition

Pingxiong Yang; Lirong Zheng; Chenglu Lin

doi:10.1016/S0167-577X(96)00204-2

Electrical characteristics of SrBi₂Ta₂O⁹ thin films prepared by pulsed laser deposition

Pingxiong Yang^*
, Lirong Zheng
, Chenglu Lin

^*此作品的通讯作者

CAS - Shanghai Institute of Microsystem and Information Technology

科研成果: 期刊稿件 › 文章 › 同行评审

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摘要

The SrBi₂Ta₂O₉ (SBT) thin film was prepared by the pulsed laser deposition (PLD) combined with annealing technique. The SBT thin film showed a well-saturated hysteresis loop with P_r of 8.4 μC/cm² and E_c of 57 kV/cm at 5 V. No fatigue was observed up to 10¹⁰ switching cycles. The I-V characteristic showed two peaks at the coercive voltage. It had a 560 pF capacitance and a static dielectric constant of 600 at zero applied voltage from the I-V characteristic. Leakage current measurements showed about 3 × 10^-8 A/cm² and the dc breakdown field was 250 kV/cm.

源语言	英语
页（从-至）	245-248
页数	4
期刊	Materials Letters
卷	30
期	2-3
DOI	https://doi.org/10.1016/S0167-577X(96)00204-2
出版状态	已出版 - 2月 1997
已对外发布	是

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@article{38ee678546014ad2bd7effc2d4b0856e,

title = "Electrical characteristics of SrBi2Ta2O9 thin films prepared by pulsed laser deposition",

abstract = "The SrBi2Ta2O9 (SBT) thin film was prepared by the pulsed laser deposition (PLD) combined with annealing technique. The SBT thin film showed a well-saturated hysteresis loop with Pr of 8.4 μC/cm2 and Ec of 57 kV/cm at 5 V. No fatigue was observed up to 1010 switching cycles. The I-V characteristic showed two peaks at the coercive voltage. It had a 560 pF capacitance and a static dielectric constant of 600 at zero applied voltage from the I-V characteristic. Leakage current measurements showed about 3 {\texttimes} 10-8 A/cm2 and the dc breakdown field was 250 kV/cm.",

keywords = "Electrical, Pulsed laser deposition, SrBiTaO, Thin films",

author = "Pingxiong Yang and Lirong Zheng and Chenglu Lin",

year = "1997",

month = feb,

doi = "10.1016/S0167-577X(96)00204-2",

language = "英语",

volume = "30",

pages = "245--248",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

number = "2-3",

}

TY - JOUR

T1 - Electrical characteristics of SrBi2Ta2O9 thin films prepared by pulsed laser deposition

AU - Yang, Pingxiong

AU - Zheng, Lirong

AU - Lin, Chenglu

PY - 1997/2

Y1 - 1997/2

N2 - The SrBi2Ta2O9 (SBT) thin film was prepared by the pulsed laser deposition (PLD) combined with annealing technique. The SBT thin film showed a well-saturated hysteresis loop with Pr of 8.4 μC/cm2 and Ec of 57 kV/cm at 5 V. No fatigue was observed up to 1010 switching cycles. The I-V characteristic showed two peaks at the coercive voltage. It had a 560 pF capacitance and a static dielectric constant of 600 at zero applied voltage from the I-V characteristic. Leakage current measurements showed about 3 × 10-8 A/cm2 and the dc breakdown field was 250 kV/cm.

AB - The SrBi2Ta2O9 (SBT) thin film was prepared by the pulsed laser deposition (PLD) combined with annealing technique. The SBT thin film showed a well-saturated hysteresis loop with Pr of 8.4 μC/cm2 and Ec of 57 kV/cm at 5 V. No fatigue was observed up to 1010 switching cycles. The I-V characteristic showed two peaks at the coercive voltage. It had a 560 pF capacitance and a static dielectric constant of 600 at zero applied voltage from the I-V characteristic. Leakage current measurements showed about 3 × 10-8 A/cm2 and the dc breakdown field was 250 kV/cm.

KW - Electrical

KW - Pulsed laser deposition

KW - SrBiTaO

KW - Thin films

UR - https://www.scopus.com/pages/publications/0031076078

U2 - 10.1016/S0167-577X(96)00204-2

DO - 10.1016/S0167-577X(96)00204-2

M3 - 文章

AN - SCOPUS:0031076078

SN - 0167-577X

VL - 30

SP - 245

EP - 248

JO - Materials Letters

JF - Materials Letters

IS - 2-3

ER -

Electrical characteristics of SrBi2Ta2O9 thin films prepared by pulsed laser deposition

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Electrical characteristics of SrBi₂Ta₂O⁹ thin films prepared by pulsed laser deposition