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Electrical behavior on packaging module for the novel photoelectric sensor

  • J. Q. Han
  • , Y. P. Wang
  • , F. M. Guo
  • , B. Xu
  • , D. Y. Xiong
  • , M. C. Zhou
  • , Y. C. Ye
  • , Z. Q. Zhu
  • , J. H. Chu
  • East China Normal University

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

This paper presents the electrical performance on low-dimensional quantum structure photoelectric sensor. The equivalent circuit model for photoelectric sensor with quantum-dot quantum-well hybrid structure was applied. The parasitical parameters can be used to investigate the performance of photoelectric detector. Based on this model, specific readout circuit was designed and simulated. A prototype was fabricated in 0.5-μm n-well standard CMOS process. Test results were presented and analyzed.

源语言英语
主期刊名2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
233-236
页数4
DOI
出版状态已出版 - 2010
活动5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010 - Xiamen, 中国
期限: 20 1月 201023 1月 2010

出版系列

姓名2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010

会议

会议5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
国家/地区中国
Xiamen
时期20/01/1023/01/10

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