Electrical and optical properties of Pb (Mg _1/3 Nb _2/3) O ₃-PbTiO ₃ thin films prepared by chemical solution deposition

92%Pb (Mg13 Nb23) O3-8%PbTiO3 (PMNT) thin films have been prepared on PtTi SiO2 Si substrate with a LaNiO3 (LNO) buffer layer and on sapphire substrate by a chemical solution deposition method, respectively. X-ray diffraction analysis shows that the PMNT thin films on PtTi SiO2 Si substrate are polycrystalline with (110)-preferential orientation. PtPMNTPt capacitors have been fabricated and show a ferroelectric character with a spontaneous polarization (Ps) of 25.2 μCcm2 and a remanent polarization (Pr) of 6.56 μCcm2. The dielectric constant (εr) and the dissipation factor (tan δ) at 1 kHz are 680 and 0.014, respectively. The band-gap energy of the PMNT thin films on the sapphire substrate was found to be about 4.03 eV by the optical transmission spectra measurement. The optical constants (n, k) of the PMNT thin films in the wavelength range of 2.5-12.6 μm were obtained by infrared spectroscopic ellipsometry measurement.