Electrical and optical properties of Bi2Ti2O 7 thin films prepared by metalorganic decomposition method

Yun Hou; Tie Lin; Zhiming Huang; Genshui Wang; Zhigao Hu; Junhao Chu; Xiaohong Xu; Min Wang

doi:10.1063/1.1777823

Electrical and optical properties of Bi₂Ti₂O ₇ thin films prepared by metalorganic decomposition method

Yun Hou^*
, Tie Lin
, Zhiming Huang
, Genshui Wang
, Zhigao Hu
, Junhao Chu
, Xiaohong Xu
, Min Wang

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics
Shandong University

科研成果: 期刊稿件 › 文章 › 同行评审

23 引用（Scopus）

摘要

The preparation of Bi₂Ti₂O₇ thin films on planatized Pt/Ti/SiO₂ substrates by metalorganic decomposition (MOD) technique was studied. Investigations show that the Pt/Bi₂Ti ₂O₇/Pt capacitors had excellent insulating properties. The optical constants (n,k) of Bi₂Ti₂O₇ thin films were obtained by spectroscopic ellisometric measurements. It was concluded that Bi₂Ti₂O₇ thin films were applicable as metal-oxide-semiconductor devices.

源语言	英语
页（从-至）	1214-1216
页数	3
期刊	Applied Physics Letters
卷	85
期	7
DOI	https://doi.org/10.1063/1.1777823
出版状态	已出版 - 16 8月 2004
已对外发布	是

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10.1063/1.1777823

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abstract = "The preparation of Bi2Ti2O7 thin films on planatized Pt/Ti/SiO2 substrates by metalorganic decomposition (MOD) technique was studied. Investigations show that the Pt/Bi2Ti 2O7/Pt capacitors had excellent insulating properties. The optical constants (n,k) of Bi2Ti2O7 thin films were obtained by spectroscopic ellisometric measurements. It was concluded that Bi2Ti2O7 thin films were applicable as metal-oxide-semiconductor devices.",

author = "Yun Hou and Tie Lin and Zhiming Huang and Genshui Wang and Zhigao Hu and Junhao Chu and Xiaohong Xu and Min Wang",

year = "2004",

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T1 - Electrical and optical properties of Bi2Ti2O 7 thin films prepared by metalorganic decomposition method

AU - Hou, Yun

AU - Lin, Tie

AU - Huang, Zhiming

AU - Wang, Genshui

AU - Hu, Zhigao

AU - Chu, Junhao

AU - Xu, Xiaohong

AU - Wang, Min

PY - 2004/8/16

Y1 - 2004/8/16

N2 - The preparation of Bi2Ti2O7 thin films on planatized Pt/Ti/SiO2 substrates by metalorganic decomposition (MOD) technique was studied. Investigations show that the Pt/Bi2Ti 2O7/Pt capacitors had excellent insulating properties. The optical constants (n,k) of Bi2Ti2O7 thin films were obtained by spectroscopic ellisometric measurements. It was concluded that Bi2Ti2O7 thin films were applicable as metal-oxide-semiconductor devices.

AB - The preparation of Bi2Ti2O7 thin films on planatized Pt/Ti/SiO2 substrates by metalorganic decomposition (MOD) technique was studied. Investigations show that the Pt/Bi2Ti 2O7/Pt capacitors had excellent insulating properties. The optical constants (n,k) of Bi2Ti2O7 thin films were obtained by spectroscopic ellisometric measurements. It was concluded that Bi2Ti2O7 thin films were applicable as metal-oxide-semiconductor devices.

UR - https://www.scopus.com/pages/publications/4444340869

U2 - 10.1063/1.1777823

DO - 10.1063/1.1777823

M3 - 文章

AN - SCOPUS:4444340869

SN - 0003-6951

VL - 85

SP - 1214

EP - 1216

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Electrical and optical properties of Bi2Ti2O 7 thin films prepared by metalorganic decomposition method

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Electrical and optical properties of Bi₂Ti₂O ₇ thin films prepared by metalorganic decomposition method