摘要
Cd1-xZnxTe films were deposited by RF magnetron sputtering from Cd0.96Zn0.04Te crystals target at different substrate temperatures, RF powers and working pressures. After deposition, the samples were annealed in high purity air at 473 K. The films were characterized using step profilometer, UV-VIS-NIR spectrophotometer, XRD and SEM. Depending on the deposition parameters and annealing, the values of the band gap of the CZT films varied between 1.45 and 2.02 eV.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 97-101 |
| 页数 | 5 |
| 期刊 | Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves |
| 卷 | 32 |
| 期 | 2 |
| DOI | |
| 出版状态 | 已出版 - 4月 2013 |
| 已对外发布 | 是 |
学术指纹
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