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Effects of deposition parameters on Cd1-xZnxTe films prepared by RF magnetron sputtering

  • Hong Cao*
  • , Jun Hao Chu
  • , Shan Li Wang
  • , Yun Hua Wu
  • , Chuan Jun Zhang
  • *此作品的通讯作者
  • CAS - Shanghai Institute of Technical Physics
  • Shanghai Center for Photovoltaics

科研成果: 期刊稿件文章同行评审

摘要

Cd1-xZnxTe films were deposited by RF magnetron sputtering from Cd0.96Zn0.04Te crystals target at different substrate temperatures, RF powers and working pressures. After deposition, the samples were annealed in high purity air at 473 K. The films were characterized using step profilometer, UV-VIS-NIR spectrophotometer, XRD and SEM. Depending on the deposition parameters and annealing, the values of the band gap of the CZT films varied between 1.45 and 2.02 eV.

源语言英语
页(从-至)97-101
页数5
期刊Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
32
2
DOI
出版状态已出版 - 4月 2013
已对外发布

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