Effective g-factor in high-mobility InGaAs/InP quantum well

Lai Ming Wei; Yuan Ming Zhou; Guo Lin Yu; Kuang Hong Gao; Xin Zhi Liu; Tie Lin; Shao Ling Guo; Ning Dai; Jun Hao Chu; Austing David Guy

Effective g-factor in high-mobility InGaAs/InP quantum well

Lai Ming Wei^*
, Yuan Ming Zhou
, Guo Lin Yu
, Kuang Hong Gao
, Xin Zhi Liu
, Tie Lin
, Shao Ling Guo
, Ning Dai
, Jun Hao Chu
, Austing David Guy

^*此作品的通讯作者

物理与电子科学学院

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

High-mobility In _0.53Ga _0.47As/InP quantum well is fabricated by the chemical beam epitaxy technique. Clear Shubnikov-de Hass (SdH) oscillation and beating pattern due to zero-field spin splitting are observed by magnetotransport measurements at low temperature. We use an analytical method, involving the simultaneous fitting of fast Fourier transform spectra of SdH oscillations at different tilted fields, to extract the effective g-factor.

源语言	英语
文章编号	127102
期刊	Wuli Xuebao/Acta Physica Sinica
卷	61
期	12
出版状态	已出版 - 20 6月 2012

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title = "Effective g-factor in high-mobility InGaAs/InP quantum well",

abstract = "High-mobility In 0.53Ga 0.47As/InP quantum well is fabricated by the chemical beam epitaxy technique. Clear Shubnikov-de Hass (SdH) oscillation and beating pattern due to zero-field spin splitting are observed by magnetotransport measurements at low temperature. We use an analytical method, involving the simultaneous fitting of fast Fourier transform spectra of SdH oscillations at different tilted fields, to extract the effective g-factor.",

keywords = "Magnetoresistance, Quantum well, g-factor",

author = "Wei, \{Lai Ming\} and Zhou, \{Yuan Ming\} and Yu, \{Guo Lin\} and Gao, \{Kuang Hong\} and Liu, \{Xin Zhi\} and Tie Lin and Guo, \{Shao Ling\} and Ning Dai and Chu, \{Jun Hao\} and Guy, \{Austing David\}",

year = "2012",

month = jun,

day = "20",

language = "英语",

volume = "61",

journal = "Wuli Xuebao/Acta Physica Sinica",

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TY - JOUR

T1 - Effective g-factor in high-mobility InGaAs/InP quantum well

AU - Wei, Lai Ming

AU - Zhou, Yuan Ming

AU - Yu, Guo Lin

AU - Gao, Kuang Hong

AU - Liu, Xin Zhi

AU - Lin, Tie

AU - Guo, Shao Ling

AU - Dai, Ning

AU - Chu, Jun Hao

AU - Guy, Austing David

PY - 2012/6/20

Y1 - 2012/6/20

N2 - High-mobility In 0.53Ga 0.47As/InP quantum well is fabricated by the chemical beam epitaxy technique. Clear Shubnikov-de Hass (SdH) oscillation and beating pattern due to zero-field spin splitting are observed by magnetotransport measurements at low temperature. We use an analytical method, involving the simultaneous fitting of fast Fourier transform spectra of SdH oscillations at different tilted fields, to extract the effective g-factor.

AB - High-mobility In 0.53Ga 0.47As/InP quantum well is fabricated by the chemical beam epitaxy technique. Clear Shubnikov-de Hass (SdH) oscillation and beating pattern due to zero-field spin splitting are observed by magnetotransport measurements at low temperature. We use an analytical method, involving the simultaneous fitting of fast Fourier transform spectra of SdH oscillations at different tilted fields, to extract the effective g-factor.

KW - Magnetoresistance

KW - Quantum well

KW - g-factor

UR - https://www.scopus.com/pages/publications/84863856477

M3 - 文章

AN - SCOPUS:84863856477

SN - 1000-3290

VL - 61

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 12

M1 - 127102

ER -

Effective g-factor in high-mobility InGaAs/InP quantum well

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