Effect of surface metallization on optical properties of porous silicon

Li Kun Pan; Hai Bo Li; Zhuo Sun; Chang Qing Sun

Effect of surface metallization on optical properties of porous silicon

Li Kun Pan^*
, Hai Bo Li
, Zhuo Sun
, Chang Qing Sun

^*此作品的通讯作者

East China Normal University
Nanyang Technological University

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

Cu, Al and Ti films of ~10 nm thickness were deposited on porous silicon (PS) at room temperature using Filtered Cathodic Vacuum Arc system and annealed at 800°C for 10 min in vacuum. The PS layers were obtained by anodization of Si wafer. X-ray photoelectron spectroscopy, photoluminescence (PL), photo-absorption (PA), and X-ray diffraction studies revealed that after annealing, Cu- and Ti-deposited samples exhibited obvious PA red-shift and Si-2p level shift, which arise from the crystal field variation due to the formation of Cu/Ti silicides at the surface as well as the conduction electronic transportation.

源语言	英语
页（从-至）	280-284
页数	5
期刊	Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices
卷	15
期	3
出版状态	已出版 - 6月 2009
已对外发布	是

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title = "Effect of surface metallization on optical properties of porous silicon",

abstract = "Cu, Al and Ti films of \textasciitilde{}10 nm thickness were deposited on porous silicon (PS) at room temperature using Filtered Cathodic Vacuum Arc system and annealed at 800°C for 10 min in vacuum. The PS layers were obtained by anodization of Si wafer. X-ray photoelectron spectroscopy, photoluminescence (PL), photo-absorption (PA), and X-ray diffraction studies revealed that after annealing, Cu- and Ti-deposited samples exhibited obvious PA red-shift and Si-2p level shift, which arise from the crystal field variation due to the formation of Cu/Ti silicides at the surface as well as the conduction electronic transportation.",

keywords = "Crystal field, Metallization, Porous silicon",

author = "Pan, \{Li Kun\} and Li, \{Hai Bo\} and Zhuo Sun and Sun, \{Chang Qing\}",

year = "2009",

month = jun,

language = "英语",

volume = "15",

pages = "280--284",

journal = "Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices",

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TY - JOUR

T1 - Effect of surface metallization on optical properties of porous silicon

AU - Pan, Li Kun

AU - Li, Hai Bo

AU - Sun, Zhuo

AU - Sun, Chang Qing

PY - 2009/6

Y1 - 2009/6

N2 - Cu, Al and Ti films of ~10 nm thickness were deposited on porous silicon (PS) at room temperature using Filtered Cathodic Vacuum Arc system and annealed at 800°C for 10 min in vacuum. The PS layers were obtained by anodization of Si wafer. X-ray photoelectron spectroscopy, photoluminescence (PL), photo-absorption (PA), and X-ray diffraction studies revealed that after annealing, Cu- and Ti-deposited samples exhibited obvious PA red-shift and Si-2p level shift, which arise from the crystal field variation due to the formation of Cu/Ti silicides at the surface as well as the conduction electronic transportation.

AB - Cu, Al and Ti films of ~10 nm thickness were deposited on porous silicon (PS) at room temperature using Filtered Cathodic Vacuum Arc system and annealed at 800°C for 10 min in vacuum. The PS layers were obtained by anodization of Si wafer. X-ray photoelectron spectroscopy, photoluminescence (PL), photo-absorption (PA), and X-ray diffraction studies revealed that after annealing, Cu- and Ti-deposited samples exhibited obvious PA red-shift and Si-2p level shift, which arise from the crystal field variation due to the formation of Cu/Ti silicides at the surface as well as the conduction electronic transportation.

KW - Crystal field

KW - Metallization

KW - Porous silicon

UR - https://www.scopus.com/pages/publications/84862098722

M3 - 文章

AN - SCOPUS:84862098722

SN - 1007-4252

VL - 15

SP - 280

EP - 284

JO - Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices

JF - Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices

IS - 3

ER -

Effect of surface metallization on optical properties of porous silicon

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