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Effect of Si, F implantation on the formation and light emitting properties of porous silicon

  • Lianwei Wang*
  • , Chenglu Lin
  • , Ping Liu
  • , Zuyao Zhou
  • , Shichang Zou
  • *此作品的通讯作者
  • CAS - Shanghai Institute of Microsystem and Information Technology

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

The effect of ion implantation on the formation and light emitting properties of porous silicon is reported. Si+, F+ ions were implanted into silicon wafers before electrochemical etching process. The experiments showed that porous structure can be formed on the wafer containing amorphous layer, while the porosity distribution with the depth changed greatly compared with the anodized crystalline Si. The implantation of F+ ions greatly affects the formation mechanism. The creation of point defects leads to red-shift in photoluminescence measurements.

源语言英语
主期刊名Materials Synthesis and Processing Using Ion Beams
编辑Anthony F. Garito, Alex K-Y. Jen, Charles Y-C. Lee, Larry R. Dalton
出版商Publ by Materials Research Society
445-450
页数6
ISBN(印刷版)1558992154
出版状态已出版 - 1994
已对外发布
活动Proceedings of the MRS 1993 Fall Meeting - Boston, MA, USA
期限: 29 11月 19933 12月 1993

出版系列

姓名Materials Research Society Symposium Proceedings
316
ISSN(印刷版)0272-9172

会议

会议Proceedings of the MRS 1993 Fall Meeting
Boston, MA, USA
时期29/11/933/12/93

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