Effect of Co doping on the structure, optical and magnetic properties of LaAlO3 thin films

Gang Wu; Hongmei Deng; Weijun Wang; Kezhi Zhang; Huiyi Cao; Pingxiong Yang; Junhao Chu

doi:10.1007/s10854-014-1994-z

Effect of Co doping on the structure, optical and magnetic properties of LaAlO₃ thin films

Gang Wu
, Hongmei Deng
, Weijun Wang
, Kezhi Zhang
, Huiyi Cao
, Pingxiong Yang^*
, Junhao Chu

^*此作品的通讯作者

物理与电子科学学院

East China Normal University
Shanghai University

科研成果: 期刊稿件 › 文章 › 同行评审

6 引用（Scopus）

摘要

LaAl_1-x Co _x O₃ (x = 0, 0.05 and 0.10) thin films were fabricated on quartz substrates by sol-gel method. X-ray diffraction data indicate that all thin films belong to perovskite LaAlO ₃, and there is no secondary phase. Two obvious Raman peaks are observed in the Raman spectra, and the 113 cm^-1 peak is assigned to A₁ mode of perovskite LaAlO₃ while the 696 cm^-1 peak is caused by the Co-O stretching vibration. The band gap of the films decreases from 5.66 to 5.40 eV with the Co composition increasing from 0 to 10 %. The magnetization of the films was investigated, and it enhances significantly with increase of the Co content.

源语言	英语
页（从-至）	3137-3140
页数	4
期刊	Journal of Materials Science: Materials in Electronics
卷	25
期	7
DOI	https://doi.org/10.1007/s10854-014-1994-z
出版状态	已出版 - 7月 2014

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10.1007/s10854-014-1994-z

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title = "Effect of Co doping on the structure, optical and magnetic properties of LaAlO3 thin films",

abstract = "LaAl1-x Co x O3 (x = 0, 0.05 and 0.10) thin films were fabricated on quartz substrates by sol-gel method. X-ray diffraction data indicate that all thin films belong to perovskite LaAlO 3, and there is no secondary phase. Two obvious Raman peaks are observed in the Raman spectra, and the 113 cm-1 peak is assigned to A1 mode of perovskite LaAlO3 while the 696 cm-1 peak is caused by the Co-O stretching vibration. The band gap of the films decreases from 5.66 to 5.40 eV with the Co composition increasing from 0 to 10 \%. The magnetization of the films was investigated, and it enhances significantly with increase of the Co content.",

author = "Gang Wu and Hongmei Deng and Weijun Wang and Kezhi Zhang and Huiyi Cao and Pingxiong Yang and Junhao Chu",

year = "2014",

month = jul,

doi = "10.1007/s10854-014-1994-z",

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volume = "25",

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journal = "Journal of Materials Science: Materials in Electronics",

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TY - JOUR

T1 - Effect of Co doping on the structure, optical and magnetic properties of LaAlO3 thin films

AU - Wu, Gang

AU - Deng, Hongmei

AU - Wang, Weijun

AU - Zhang, Kezhi

AU - Cao, Huiyi

AU - Yang, Pingxiong

AU - Chu, Junhao

PY - 2014/7

Y1 - 2014/7

N2 - LaAl1-x Co x O3 (x = 0, 0.05 and 0.10) thin films were fabricated on quartz substrates by sol-gel method. X-ray diffraction data indicate that all thin films belong to perovskite LaAlO 3, and there is no secondary phase. Two obvious Raman peaks are observed in the Raman spectra, and the 113 cm-1 peak is assigned to A1 mode of perovskite LaAlO3 while the 696 cm-1 peak is caused by the Co-O stretching vibration. The band gap of the films decreases from 5.66 to 5.40 eV with the Co composition increasing from 0 to 10 %. The magnetization of the films was investigated, and it enhances significantly with increase of the Co content.

AB - LaAl1-x Co x O3 (x = 0, 0.05 and 0.10) thin films were fabricated on quartz substrates by sol-gel method. X-ray diffraction data indicate that all thin films belong to perovskite LaAlO 3, and there is no secondary phase. Two obvious Raman peaks are observed in the Raman spectra, and the 113 cm-1 peak is assigned to A1 mode of perovskite LaAlO3 while the 696 cm-1 peak is caused by the Co-O stretching vibration. The band gap of the films decreases from 5.66 to 5.40 eV with the Co composition increasing from 0 to 10 %. The magnetization of the films was investigated, and it enhances significantly with increase of the Co content.

UR - https://www.scopus.com/pages/publications/84902545194

U2 - 10.1007/s10854-014-1994-z

DO - 10.1007/s10854-014-1994-z

M3 - 文章

AN - SCOPUS:84902545194

SN - 0957-4522

VL - 25

SP - 3137

EP - 3140

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 7

ER -

Effect of Co doping on the structure, optical and magnetic properties of LaAlO3 thin films

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Effect of Co doping on the structure, optical and magnetic properties of LaAlO₃ thin films