Effect of annealing ambient on structure and ferroelectric properties of Pb(Zr0.4Ti0.6)O3 thin films on LaNiO 3 coated Si substrates

J. H. Ma; X. J. Meng; J. L. Sun; T. Lin; F. W. Shi; J. H. Chu

doi:10.1016/j.materresbull.2004.10.022

Effect of annealing ambient on structure and ferroelectric properties of Pb(Zr_0.4Ti_0.6)O₃ thin films on LaNiO ₃ coated Si substrates

J. H. Ma^*
, X. J. Meng
, J. L. Sun
, T. Lin
, F. W. Shi
, J. H. Chu

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件 › 文章 › 同行评审

8 引用（Scopus）

摘要

Pb(Zr_0.4Ti_0.6)O₃ [PZT(40/60)] thin films were deposited onto LaNiO₃ (LNO) coated Si substrates by sol-gel technique. Three kinds of gases, air, O₂ and N₂, were used as the annealing ambient. The effect of the annealing ambient on their structure and ferroelectric properties was investigated. The results showed that both the films annealed in air and O₂ were the complete perovskite phase with (1 0 0) preferential orientation, while those annealed in N ₂ were random orientation including some pyrochlore phases. As compared with the air ambient, either too much O₂ or too much N ₂ was detrimental to the ferroelectric properties of PZT films. The difference in structure and ferroelectric properties was mainly associated with the intermediate phases and the concentration of domain pinning centers in the films.

源语言	英语
页（从-至）	221-228
页数	8
期刊	Materials Research Bulletin
卷	40
期	2
DOI	https://doi.org/10.1016/j.materresbull.2004.10.022
出版状态	已出版 - 15 2月 2005
已对外发布	是

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10.1016/j.materresbull.2004.10.022

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@article{223143ac61c7486199e03eb1473efeb1,

title = "Effect of annealing ambient on structure and ferroelectric properties of Pb(Zr0.4Ti0.6)O3 thin films on LaNiO 3 coated Si substrates",

abstract = "Pb(Zr0.4Ti0.6)O3 [PZT(40/60)] thin films were deposited onto LaNiO3 (LNO) coated Si substrates by sol-gel technique. Three kinds of gases, air, O2 and N2, were used as the annealing ambient. The effect of the annealing ambient on their structure and ferroelectric properties was investigated. The results showed that both the films annealed in air and O2 were the complete perovskite phase with (1 0 0) preferential orientation, while those annealed in N 2 were random orientation including some pyrochlore phases. As compared with the air ambient, either too much O2 or too much N 2 was detrimental to the ferroelectric properties of PZT films. The difference in structure and ferroelectric properties was mainly associated with the intermediate phases and the concentration of domain pinning centers in the films.",

keywords = "A. Thin films, B. Chemical synthesis, D. Crystal structure, D. Ferroelectricity",

author = "Ma, \{J. H.\} and Meng, \{X. J.\} and Sun, \{J. L.\} and T. Lin and Shi, \{F. W.\} and Chu, \{J. H.\}",

year = "2005",

month = feb,

day = "15",

doi = "10.1016/j.materresbull.2004.10.022",

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volume = "40",

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TY - JOUR

T1 - Effect of annealing ambient on structure and ferroelectric properties of Pb(Zr0.4Ti0.6)O3 thin films on LaNiO 3 coated Si substrates

AU - Ma, J. H.

AU - Meng, X. J.

AU - Sun, J. L.

AU - Lin, T.

AU - Shi, F. W.

AU - Chu, J. H.

PY - 2005/2/15

Y1 - 2005/2/15

N2 - Pb(Zr0.4Ti0.6)O3 [PZT(40/60)] thin films were deposited onto LaNiO3 (LNO) coated Si substrates by sol-gel technique. Three kinds of gases, air, O2 and N2, were used as the annealing ambient. The effect of the annealing ambient on their structure and ferroelectric properties was investigated. The results showed that both the films annealed in air and O2 were the complete perovskite phase with (1 0 0) preferential orientation, while those annealed in N 2 were random orientation including some pyrochlore phases. As compared with the air ambient, either too much O2 or too much N 2 was detrimental to the ferroelectric properties of PZT films. The difference in structure and ferroelectric properties was mainly associated with the intermediate phases and the concentration of domain pinning centers in the films.

AB - Pb(Zr0.4Ti0.6)O3 [PZT(40/60)] thin films were deposited onto LaNiO3 (LNO) coated Si substrates by sol-gel technique. Three kinds of gases, air, O2 and N2, were used as the annealing ambient. The effect of the annealing ambient on their structure and ferroelectric properties was investigated. The results showed that both the films annealed in air and O2 were the complete perovskite phase with (1 0 0) preferential orientation, while those annealed in N 2 were random orientation including some pyrochlore phases. As compared with the air ambient, either too much O2 or too much N 2 was detrimental to the ferroelectric properties of PZT films. The difference in structure and ferroelectric properties was mainly associated with the intermediate phases and the concentration of domain pinning centers in the films.

KW - A. Thin films

KW - B. Chemical synthesis

KW - D. Crystal structure

KW - D. Ferroelectricity

UR - https://www.scopus.com/pages/publications/12344297691

U2 - 10.1016/j.materresbull.2004.10.022

DO - 10.1016/j.materresbull.2004.10.022

M3 - 文章

AN - SCOPUS:12344297691

SN - 0025-5408

VL - 40

SP - 221

EP - 228

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 2

ER -

Effect of annealing ambient on structure and ferroelectric properties of Pb(Zr0.4Ti0.6)O3 thin films on LaNiO 3 coated Si substrates

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Effect of annealing ambient on structure and ferroelectric properties of Pb(Zr_0.4Ti_0.6)O₃ thin films on LaNiO ₃ coated Si substrates