Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

Nobuhiko Mitoma; Shinya Aikawa; Wei Ou-Yang; Xu Gao; Takio Kizu; Meng Fang Lin; Akihiko Fujiwara; Toshihide Nabatame; Kazuhito Tsukagoshi

doi:10.1063/1.4907285

Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

Nobuhiko Mitoma^*
, Shinya Aikawa
, Wei Ou-Yang
, Xu Gao
, Takio Kizu
, Meng Fang Lin
, Akihiko Fujiwara
, Toshihide Nabatame
, Kazuhito Tsukagoshi

^*此作品的通讯作者

物理与电子科学学院

National Institute for Materials Science Tsukuba
Kogakuin University
Soochow University
Japan Synchrotron Radiation Research Institute

科研成果: 期刊稿件 › 文章 › 同行评审

72 引用（Scopus）

摘要

The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InO_x) thin film transistors (TFTs) is reported. In a-InO_x TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InO_x matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InO_x TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.

源语言	英语
文章编号	042106
期刊	Applied Physics Letters
卷	106
期	4
DOI	https://doi.org/10.1063/1.4907285
出版状态	已出版 - 26 1月 2015

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abstract = "The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InOx) thin film transistors (TFTs) is reported. In a-InOx TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InOx matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InOx TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.",

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AU - Mitoma, Nobuhiko

AU - Aikawa, Shinya

AU - Ou-Yang, Wei

AU - Gao, Xu

AU - Kizu, Takio

AU - Lin, Meng Fang

AU - Fujiwara, Akihiko

AU - Nabatame, Toshihide

AU - Tsukagoshi, Kazuhito

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N2 - The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InOx) thin film transistors (TFTs) is reported. In a-InOx TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InOx matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InOx TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.

AB - The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InOx) thin film transistors (TFTs) is reported. In a-InOx TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InOx matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InOx TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.

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DO - 10.1063/1.4907285

M3 - 文章

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SN - 0003-6951

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 042106

ER -

Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

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