摘要
Compact femtosecond laser operation of Yb:Gd2SiO5 (Yb:GSO) crystal was demonstrated under high-brightness diode-end-pumping. A semiconductor saturable absorption mirror was used to start passive mode-locking. Stable mode-locking could be realized near the emission bands around 1031, 1048, and 1088 nm, respectively. The mode-locked Yb:GSO laser could be tuned from one stable mode-locking band to another with adjustable pulse durations in the range 1-100 ps by slightly aligning laser cavity to allow laser oscillations at different central wavelengths. A pair of SF10 prisms was inserted into the laser cavity to compensate for the group velocity dispersion. The mode-locked pulses centered at 1031 nm were compressed to 343 fs under a typical operation situation with a maximum output power of 396 mW.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 2354-2359 |
| 页数 | 6 |
| 期刊 | Optics Express |
| 卷 | 15 |
| 期 | 5 |
| DOI | |
| 出版状态 | 已出版 - 5 3月 2007 |
| 已对外发布 | 是 |
指纹
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