Dielectric relaxation and transition of porous silicon

L. K. Pan; H. T. Huang; Chang Q. Sun

doi:10.1063/1.1594821

Dielectric relaxation and transition of porous silicon

L. K. Pan^*
, H. T. Huang
, Chang Q. Sun

^*此作品的通讯作者

Nanyang Technological University

科研成果: 期刊稿件 › 文章 › 同行评审

52 引用（Scopus）

摘要

A study was performed on the dielectric relaxation and transition of porous silicon. The dielectric impedance measurements revealed three semicircles in a Cole-Cole plot when the temperature was raised to 773 K. It was found that at critical temperature, a high degree of dispersion in the real and imaginary parts of the permittivity occurred at low frequencies.

源语言	英语
页（从-至）	2695-2700
页数	6
期刊	Journal of Applied Physics
卷	94
期	4
DOI	https://doi.org/10.1063/1.1594821
出版状态	已出版 - 15 8月 2003
已对外发布	是

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abstract = "A study was performed on the dielectric relaxation and transition of porous silicon. The dielectric impedance measurements revealed three semicircles in a Cole-Cole plot when the temperature was raised to 773 K. It was found that at critical temperature, a high degree of dispersion in the real and imaginary parts of the permittivity occurred at low frequencies.",

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AB - A study was performed on the dielectric relaxation and transition of porous silicon. The dielectric impedance measurements revealed three semicircles in a Cole-Cole plot when the temperature was raised to 773 K. It was found that at critical temperature, a high degree of dispersion in the real and imaginary parts of the permittivity occurred at low frequencies.

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M3 - 文章

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Dielectric relaxation and transition of porous silicon

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