Dielectric functions of ferroelectric Bi3.25La0.75Ti3O12 thin films on Si(100) substrates

Z. G. Hu; J. H. Ma; Z. M. Huang; Y. N. Wu; G. S. Wang; J. H. Chu

doi:10.1063/1.1619208

Dielectric functions of ferroelectric Bi_3.25La_0.75Ti₃O₁₂ thin films on Si(100) substrates

Z. G. Hu^*
, J. H. Ma
, Z. M. Huang
, Y. N. Wu
, G. S. Wang
, J. H. Chu

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件 › 文章 › 同行评审

34 引用（Scopus）

摘要

The optical properties of the BLT films on Si(100) substrates in the wide energy range of 0.73 to 6 eV were investigated using spectroscopic ellipsometry. Crystalline quality affected the dielectric functions of the BLT films beyond the fundamental band gap. The direct fundamental optical band gaps of the BLT films annealed at 590 and 700°C are 4.60 and 4.64 eV, respectively.

源语言	英语
页（从-至）	3686-3688
页数	3
期刊	Applied Physics Letters
卷	83
期	18
DOI	https://doi.org/10.1063/1.1619208
出版状态	已出版 - 3 11月 2003
已对外发布	是

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abstract = "The optical properties of the BLT films on Si(100) substrates in the wide energy range of 0.73 to 6 eV were investigated using spectroscopic ellipsometry. Crystalline quality affected the dielectric functions of the BLT films beyond the fundamental band gap. The direct fundamental optical band gaps of the BLT films annealed at 590 and 700°C are 4.60 and 4.64 eV, respectively.",

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AU - Hu, Z. G.

AU - Ma, J. H.

AU - Huang, Z. M.

AU - Wu, Y. N.

AU - Wang, G. S.

AU - Chu, J. H.

PY - 2003/11/3

Y1 - 2003/11/3

N2 - The optical properties of the BLT films on Si(100) substrates in the wide energy range of 0.73 to 6 eV were investigated using spectroscopic ellipsometry. Crystalline quality affected the dielectric functions of the BLT films beyond the fundamental band gap. The direct fundamental optical band gaps of the BLT films annealed at 590 and 700°C are 4.60 and 4.64 eV, respectively.

AB - The optical properties of the BLT films on Si(100) substrates in the wide energy range of 0.73 to 6 eV were investigated using spectroscopic ellipsometry. Crystalline quality affected the dielectric functions of the BLT films beyond the fundamental band gap. The direct fundamental optical band gaps of the BLT films annealed at 590 and 700°C are 4.60 and 4.64 eV, respectively.

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Dielectric functions of ferroelectric Bi3.25La0.75Ti3O12 thin films on Si(100) substrates

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Dielectric functions of ferroelectric Bi_3.25La_0.75Ti₃O₁₂ thin films on Si(100) substrates