Determination of the contributions of degenerate and non-degenerate two-photon absorption response in silicon avalanche photodiode for infrared photon detection

The study of non-linear interactions in semiconductor photo-electronic devices to achieve effective and fast photon identification is an ongoing and important task. We investigated the specific contribution of degenerate and non-degenerate two-photon absorption (D-TPA and ND-TPA) response in silicon avalanche photodiode (Si-APD) for infrared photon detection at room temperature. We experimentally demonstrated that when the two laser pulses overlapped, the average D-TPA quantum detection efficiencies at 1800 nm, and that at 1550 nm were measured as 3.3 × 10⁻¹⁶ counts•pulse/photon², 4.3 × 10⁻¹⁵ counts•pulse/photon², respectively. And the ND-TPA quantum detection efficiency of 1800 nm and 1550 nm was measured to be 7.9 × 10⁻¹⁶ counts•pulse/photon². This study provides a solution for the practical infrared photon detection devices based on TPA effect in Si-APDs.