Determination of source series resistances for InP HEMT under normal bias condition

Ao Zhang; Jianjun Gao

doi:10.1016/j.sse.2024.108975

Determination of source series resistances for InP HEMT under normal bias condition

Ao Zhang
, Jianjun Gao^*

^*此作品的通讯作者

物理与电子科学学院

Nantong University

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

A novel approach to determine the source series resistance for InP HEMT device, which combines the DC characteristics measurement and S-parameters measurement under normal bias condition is developed in this paper. Three HEMT devices with different gatewidth have been used to verify the validity of the method, and good agreement is obtained between modeled and measured S-parameters and noise parameters.

源语言	英语
文章编号	108975
期刊	Solid-State Electronics
卷	219
DOI	https://doi.org/10.1016/j.sse.2024.108975
出版状态	已出版 - 9月 2024

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10.1016/j.sse.2024.108975

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@article{6ee8721ac8504a83a370ff21d2996e1d,

title = "Determination of source series resistances for InP HEMT under normal bias condition",

abstract = "A novel approach to determine the source series resistance for InP HEMT device, which combines the DC characteristics measurement and S-parameters measurement under normal bias condition is developed in this paper. Three HEMT devices with different gatewidth have been used to verify the validity of the method, and good agreement is obtained between modeled and measured S-parameters and noise parameters.",

keywords = "HEMT, Parameter extraction, Source series resistance",

author = "Ao Zhang and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 2024 Elsevier Ltd",

year = "2024",

month = sep,

doi = "10.1016/j.sse.2024.108975",

language = "英语",

volume = "219",

journal = "Solid-State Electronics",

issn = "0038-1101",

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TY - JOUR

T1 - Determination of source series resistances for InP HEMT under normal bias condition

AU - Zhang, Ao

AU - Gao, Jianjun

PY - 2024/9

Y1 - 2024/9

N2 - A novel approach to determine the source series resistance for InP HEMT device, which combines the DC characteristics measurement and S-parameters measurement under normal bias condition is developed in this paper. Three HEMT devices with different gatewidth have been used to verify the validity of the method, and good agreement is obtained between modeled and measured S-parameters and noise parameters.

AB - A novel approach to determine the source series resistance for InP HEMT device, which combines the DC characteristics measurement and S-parameters measurement under normal bias condition is developed in this paper. Three HEMT devices with different gatewidth have been used to verify the validity of the method, and good agreement is obtained between modeled and measured S-parameters and noise parameters.

KW - HEMT

KW - Parameter extraction

KW - Source series resistance

UR - https://www.scopus.com/pages/publications/85197340474

U2 - 10.1016/j.sse.2024.108975

DO - 10.1016/j.sse.2024.108975

M3 - 文章

AN - SCOPUS:85197340474

SN - 0038-1101

VL - 219

JO - Solid-State Electronics

JF - Solid-State Electronics

M1 - 108975

ER -

Determination of source series resistances for InP HEMT under normal bias condition

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