Design of the RF front-end circuits for 433 MHz ASK receiver

The RF front-end circuits for 433 MHz ASK receiver are proposed in this paper. The design methodology of the low noise amplifier and down-mixer is presented in detail from the aspects of noise, matching, voltage gain and linearity, with the parasitic effects of the package and ESD protection circuit being considered. Fabricated in 0.18 μm CMOS process, the RF front-end circuit totally consumes 10.09 mA from 1.8 V power supply. The major measurement results are described as follows: the low noise amplifier achieves 1.35 dB NF, 17.43 dB gain and -8.90 dBm input-referred P_1dB (at 50 Ω input impedance); the down-mixer features 7.57 dB NF, 10.35 dB gain and -4.83 dBm input-referred P_1dB (at 100 Ω input impedance).