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Design and realization of Si-based RF passive low-pass filter

  • Xiao Jin Li*
  • , Yan Ling Shi
  • , Shu Zhen You
  • , Zong Sheng Lai
  • *此作品的通讯作者
  • East China Normal University

科研成果: 期刊稿件文章同行评审

摘要

Because of lower power, lower area and lower noise, passive filter is better than active filter. But fabricating high factor is the necklace of the fabricating passive filter on chips. This paper provides the design methods of the microwave passive low-pass filter. A three-order low-pass filter has been designed using the design method which is studied. The transformation from the schematic-level to layout-level is completed using the software which is compiled by the author. C1, L1, C2 are 5.4346 pF, 13.252 nH and 5.4346 pF. The filter has a corner frequency of 900MHz whereas the attenuation is -3 dB. Simulation has been done in layout level using the software ADS. At last this paper simulates the filter using the Aglient software ADS. According to the simulation result the filter designed has been realized, the S-parameter shows that the sample has good working characteristics.

源语言英语
页(从-至)88-91
页数4
期刊Dianzi Qijian/Journal of Electron Devices
29
1
出版状态已出版 - 3月 2006

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