Design and analysis of III-V quintuple-junction solar cells based on detailed balance limit

Xing Gao; Boyu Yang; Chao Zhang; Wei Zhou; Jinchao Tong; Junhao Chu

doi:10.1016/j.matlet.2026.140519

Design and analysis of III-V quintuple-junction solar cells based on detailed balance limit

Xing Gao
, Boyu Yang
, Chao Zhang
, Wei Zhou
, Jinchao Tong^*
, Junhao Chu

^*此作品的通讯作者

Fudan University

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

To transcend triple-junction devices limits, we explores III-V quintuple-junction solar cells using a detailed balance model integrating graphical analysis and numerical traversal algorithm. We identified an ideal structure: (Al_0.438Ga_0.562)_0.51In_0.49P / Al_0.194Ga_0.806As / Ga_0.938In_0.062As / Ga_0.700In_0.300As / Ga_0.422In_0.578As (2.14/1.67/1.33/1.01/0.70 eV), yielding 57.47% efficiency. Transitioning to a practical GaInP/Ge architecture, it demonstrates exceptional process tolerance over GaSb alternatives, offering a wide processing window to guide next-generation photovoltaic fabrication.

源语言	英语
文章编号	140519
期刊	Materials Letters
卷	413
DOI	https://doi.org/10.1016/j.matlet.2026.140519
出版状态	已出版 - 15 6月 2026
已对外发布	是

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title = "Design and analysis of III-V quintuple-junction solar cells based on detailed balance limit",

abstract = "To transcend triple-junction devices limits, we explores III-V quintuple-junction solar cells using a detailed balance model integrating graphical analysis and numerical traversal algorithm. We identified an ideal structure: (Al0.438Ga0.562)0.51In0.49P / Al0.194Ga0.806As / Ga0.938In0.062As / Ga0.700In0.300As / Ga0.422In0.578As (2.14/1.67/1.33/1.01/0.70 eV), yielding 57.47\% efficiency. Transitioning to a practical GaInP/Ge architecture, it demonstrates exceptional process tolerance over GaSb alternatives, offering a wide processing window to guide next-generation photovoltaic fabrication.",

author = "Xing Gao and Boyu Yang and Chao Zhang and Wei Zhou and Jinchao Tong and Junhao Chu",

note = "Publisher Copyright: {\textcopyright} 2026 Elsevier B.V.",

year = "2026",

month = jun,

day = "15",

doi = "10.1016/j.matlet.2026.140519",

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T1 - Design and analysis of III-V quintuple-junction solar cells based on detailed balance limit

AU - Gao, Xing

AU - Yang, Boyu

AU - Zhang, Chao

AU - Zhou, Wei

AU - Tong, Jinchao

AU - Chu, Junhao

PY - 2026/6/15

Y1 - 2026/6/15

N2 - To transcend triple-junction devices limits, we explores III-V quintuple-junction solar cells using a detailed balance model integrating graphical analysis and numerical traversal algorithm. We identified an ideal structure: (Al0.438Ga0.562)0.51In0.49P / Al0.194Ga0.806As / Ga0.938In0.062As / Ga0.700In0.300As / Ga0.422In0.578As (2.14/1.67/1.33/1.01/0.70 eV), yielding 57.47% efficiency. Transitioning to a practical GaInP/Ge architecture, it demonstrates exceptional process tolerance over GaSb alternatives, offering a wide processing window to guide next-generation photovoltaic fabrication.

AB - To transcend triple-junction devices limits, we explores III-V quintuple-junction solar cells using a detailed balance model integrating graphical analysis and numerical traversal algorithm. We identified an ideal structure: (Al0.438Ga0.562)0.51In0.49P / Al0.194Ga0.806As / Ga0.938In0.062As / Ga0.700In0.300As / Ga0.422In0.578As (2.14/1.67/1.33/1.01/0.70 eV), yielding 57.47% efficiency. Transitioning to a practical GaInP/Ge architecture, it demonstrates exceptional process tolerance over GaSb alternatives, offering a wide processing window to guide next-generation photovoltaic fabrication.

UR - https://www.scopus.com/pages/publications/105033445314

U2 - 10.1016/j.matlet.2026.140519

DO - 10.1016/j.matlet.2026.140519

M3 - 文章

AN - SCOPUS:105033445314

SN - 0167-577X

VL - 413

JO - Materials Letters

JF - Materials Letters

M1 - 140519

ER -

Design and analysis of III-V quintuple-junction solar cells based on detailed balance limit

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