摘要
ZnO films were prepared by filtered cathodic vacuum arc technique with Zn target at different substrate temperatures. The crystallinity is enhanced with increasing substrate temperature and preferably oriented at (1 0 3) direction when the substrate temperature is higher than 230°C. The PL emission corresponding to the exciton transition at 3.37 eV can be observed at room temperature, which indicates that high-quality films have been obtained by this technique. The Hall mobility, which increases with substrate temperature, is dominated by grain boundary scattering.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 617-620 |
| 页数 | 4 |
| 期刊 | Materials Science in Semiconductor Processing |
| 卷 | 4 |
| 期 | 6 |
| DOI | |
| 出版状态 | 已出版 - 12月 2001 |
| 已对外发布 | 是 |
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