Deep/shallow levels in arsenic-doped HgCdTe determined by modulated photoluminescence spectra

Fangyu Yue; Jun Wu; Junhao Chu

doi:10.1063/1.2983655

Deep/shallow levels in arsenic-doped HgCdTe determined by modulated photoluminescence spectra

Fangyu Yue^*
, Jun Wu
, Junhao Chu

^*此作品的通讯作者

物理与电子科学学院

CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件 › 文章 › 同行评审

35 引用（Scopus）

摘要

The modulated photoluminescence spectra have been performed on as-grown and in situ annealed arsenic-doped _Hg1-x _Cdx Te grown by molecular beam epitaxy. Besides the discussions about shallow levels including _VHg, _AsHg, _VHg - _AsHg complex, and _TeHg, two deep levels have been observed in as-grown with an ionization energy of ∼77.0 and ∼95.0 meV, respectively, which can be completely eliminated by annealing and temporarily ascribed to As-related clusters or interstitials.

源语言	英语
期刊论文编号	131909
期刊	Applied Physics Letters
卷	93
期	13
DOI	https://doi.org/10.1063/1.2983655
出版状态	已出版 - 2008

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title = "Deep/shallow levels in arsenic-doped HgCdTe determined by modulated photoluminescence spectra",

abstract = "The modulated photoluminescence spectra have been performed on as-grown and in situ annealed arsenic-doped Hg1-x Cdx Te grown by molecular beam epitaxy. Besides the discussions about shallow levels including VHg, AsHg, VHg - AsHg complex, and TeHg, two deep levels have been observed in as-grown with an ionization energy of ∼77.0 and ∼95.0 meV, respectively, which can be completely eliminated by annealing and temporarily ascribed to As-related clusters or interstitials.",

author = "Fangyu Yue and Jun Wu and Junhao Chu",

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AU - Yue, Fangyu

AU - Wu, Jun

AU - Chu, Junhao

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N2 - The modulated photoluminescence spectra have been performed on as-grown and in situ annealed arsenic-doped Hg1-x Cdx Te grown by molecular beam epitaxy. Besides the discussions about shallow levels including VHg, AsHg, VHg - AsHg complex, and TeHg, two deep levels have been observed in as-grown with an ionization energy of ∼77.0 and ∼95.0 meV, respectively, which can be completely eliminated by annealing and temporarily ascribed to As-related clusters or interstitials.

AB - The modulated photoluminescence spectra have been performed on as-grown and in situ annealed arsenic-doped Hg1-x Cdx Te grown by molecular beam epitaxy. Besides the discussions about shallow levels including VHg, AsHg, VHg - AsHg complex, and TeHg, two deep levels have been observed in as-grown with an ionization energy of ∼77.0 and ∼95.0 meV, respectively, which can be completely eliminated by annealing and temporarily ascribed to As-related clusters or interstitials.

UR - https://www.scopus.com/pages/publications/53349160747

U2 - 10.1063/1.2983655

DO - 10.1063/1.2983655

M3 - 文章

AN - SCOPUS:53349160747

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 131909

ER -

Deep/shallow levels in arsenic-doped HgCdTe determined by modulated photoluminescence spectra

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