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DC and RF Small Signal Modeling of 28nm Planar MOSFET

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

In this paper, DC model and RF small signal model of 28nm planar MOSFET are proposed respectively. First, using the industry standard model, the Berkeley Short-Channel IGFET Model (BSIM), a DC global model of the MOSFET is established. An RF small-signal model up to 100 GHz is also obtained accurately. A nonlinear rational function is fitted to obtain the parameters. Due to the physical limitations of the mathematical model, the RF small-signal model is fitted with the RF quality factor. The analysis of the parasitic parameter variations at different voltages is performed. Good agreement is obtained between the equivalent circuit-modeled and TCAD-simulated data, which verifies the reliability of the model.

源语言英语
主期刊名2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023
出版商Institute of Electrical and Electronics Engineers Inc.
603-606
页数4
ISBN(电子版)9798350318517
DOI
出版状态已出版 - 2023
活动8th International Conference on Integrated Circuits and Microsystems, ICICM 2023 - Nanjing, 中国
期限: 20 10月 202323 10月 2023

出版系列

姓名2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023

会议

会议8th International Conference on Integrated Circuits and Microsystems, ICICM 2023
国家/地区中国
Nanjing
时期20/10/2323/10/23

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