DC and analog/RF performance of C-shaped pocket TFET (CSP-TFET) with fully overlapping gate

A C-shaped pocket tunnel field effect transistor (CSP-TFET) has been designed and optimized based on the traditional double-gate TFETs by introducing a C-shaped pocket region between the source and channel to improve the device performance. A gate-to-pocket overlapping structure is also examined in the proposed CSP-TFET to enhance the gate controllability. The effects of the pocket length, pocket doping concentration and gate-to-pocket overlapping structure on the DC and analog/RF characteristics of the CSP-TFET are estimated after calibrating the tunneling model in double-gate TFETs. The DC and analog/RF performance such as on-state current (Ion), on/off current ratio (Ion/Ioff), subthreshold swing (SS) transconductance (gm), cut-off frequency ( fT) and gain-bandwidth product (GBP) are investigated. The optimized CSPTFET device exhibits excellent performance with high Ion (9.98×10^-4A/μm), high Ion/Ioff (∼10¹¹), as well as low SS (∼ 12 mV/dec). The results reveal that the CSP-TFET device could be a potential alternative for the next generation of semiconductor devices.