Crystallization-dependent magnetic properties of Mn                         1.56                         Co                         0.96                         Ni                         0.48                         O                         4                          thin films

Y. Q. Gao; Z. M. Huang; Y. Hou; J. Wu; Z. Q. Li; J. H. Chu

doi:10.1016/j.apsusc.2009.10.103

Crystallization-dependent magnetic properties of Mn _1.56 Co _0.96 Ni _0.48 O ₄ thin films

Y. Q. Gao
, Z. M. Huang^*
, Y. Hou
, J. Wu
, Z. Q. Li
, J. H. Chu

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics
Faculty of Science

科研成果: 期刊稿件 › 文章 › 同行评审

9 引用（Scopus）

摘要

The effects of magnetic property dependence of the Mn _1.56 Co _0.96 Ni _0.48 O ₄ (MCN) films on crystallization are investigated in the growth temperature of 450-750 °C. With the growth temperature increase, both the crystalline quality and the grain size improve. The MCN films exhibit paramagnetic to ferromagnetic transition and the paramagnetic parts fit to the modified Curie-Weiss law. The ferromagnetic couplings of the magnetic ions in the MCN films enhance at elevated growth temperature. The saturation magnetization at 5 K increases with increasing growth temperature, but coercive field decreases monotonously. The magnetic properties of the MCN films strongly depend on their microstructures.

源语言	英语
页（从-至）	2552-2556
页数	5
期刊	Applied Surface Science
卷	256
期	8
DOI	https://doi.org/10.1016/j.apsusc.2009.10.103
出版状态	已出版 - 1 2月 2010
已对外发布	是

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10.1016/j.apsusc.2009.10.103

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Gao, Y. Q., Huang, Z. M., Hou, Y., Wu, J., Li, Z. Q., & Chu, J. H. (2010). Crystallization-dependent magnetic properties of Mn _1.56 Co _0.96 Ni _0.48 O ₄ thin films Applied Surface Science, 256(8), 2552-2556. https://doi.org/10.1016/j.apsusc.2009.10.103

Gao, Y. Q. ; Huang, Z. M. ; Hou, Y. 等. / Crystallization-dependent magnetic properties of Mn _1.56 Co _0.96 Ni _0.48 O ₄ thin films 在: Applied Surface Science. 2010 ; 卷 256, 号码 8. 页码 2552-2556.

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title = " Crystallization-dependent magnetic properties of Mn 1.56 Co 0.96 Ni 0.48 O 4 thin films ",

abstract = " The effects of magnetic property dependence of the Mn 1.56 Co 0.96 Ni 0.48 O 4 (MCN) films on crystallization are investigated in the growth temperature of 450-750 °C. With the growth temperature increase, both the crystalline quality and the grain size improve. The MCN films exhibit paramagnetic to ferromagnetic transition and the paramagnetic parts fit to the modified Curie-Weiss law. The ferromagnetic couplings of the magnetic ions in the MCN films enhance at elevated growth temperature. The saturation magnetization at 5 K increases with increasing growth temperature, but coercive field decreases monotonously. The magnetic properties of the MCN films strongly depend on their microstructures.",

keywords = "Crystallization-dependent, Magnetic properties, Thin films, Transition metal oxide",

author = "Gao, \{Y. Q.\} and Huang, \{Z. M.\} and Y. Hou and J. Wu and Li, \{Z. Q.\} and Chu, \{J. H.\}",

year = "2010",

month = feb,

day = "1",

doi = "10.1016/j.apsusc.2009.10.103",

language = "英语",

volume = "256",

pages = "2552--2556",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "8",

}

Gao, YQ, Huang, ZM, Hou, Y, Wu, J, Li, ZQ & Chu, JH 2010, ' Crystallization-dependent magnetic properties of Mn _1.56 Co _0.96 Ni _0.48 O ₄ thin films ', Applied Surface Science, 卷 256, 号码 8, 页码 2552-2556. https://doi.org/10.1016/j.apsusc.2009.10.103

Crystallization-dependent magnetic properties of Mn _1.56 Co _0.96 Ni _0.48 O ₄ thin films . / Gao, Y. Q.; Huang, Z. M.; Hou, Y. 等.
在: Applied Surface Science, 卷 256, 号码 8, 01.02.2010, 页码 2552-2556.

科研成果: 期刊稿件 › 文章 › 同行评审

TY - JOUR

T1 - Crystallization-dependent magnetic properties of Mn 1.56 Co 0.96 Ni 0.48 O 4 thin films

AU - Gao, Y. Q.

AU - Huang, Z. M.

AU - Hou, Y.

AU - Wu, J.

AU - Li, Z. Q.

AU - Chu, J. H.

PY - 2010/2/1

Y1 - 2010/2/1

N2 - The effects of magnetic property dependence of the Mn 1.56 Co 0.96 Ni 0.48 O 4 (MCN) films on crystallization are investigated in the growth temperature of 450-750 °C. With the growth temperature increase, both the crystalline quality and the grain size improve. The MCN films exhibit paramagnetic to ferromagnetic transition and the paramagnetic parts fit to the modified Curie-Weiss law. The ferromagnetic couplings of the magnetic ions in the MCN films enhance at elevated growth temperature. The saturation magnetization at 5 K increases with increasing growth temperature, but coercive field decreases monotonously. The magnetic properties of the MCN films strongly depend on their microstructures.

AB - The effects of magnetic property dependence of the Mn 1.56 Co 0.96 Ni 0.48 O 4 (MCN) films on crystallization are investigated in the growth temperature of 450-750 °C. With the growth temperature increase, both the crystalline quality and the grain size improve. The MCN films exhibit paramagnetic to ferromagnetic transition and the paramagnetic parts fit to the modified Curie-Weiss law. The ferromagnetic couplings of the magnetic ions in the MCN films enhance at elevated growth temperature. The saturation magnetization at 5 K increases with increasing growth temperature, but coercive field decreases monotonously. The magnetic properties of the MCN films strongly depend on their microstructures.

KW - Crystallization-dependent

KW - Magnetic properties

KW - Thin films

KW - Transition metal oxide

UR - https://www.scopus.com/pages/publications/74149083563

U2 - 10.1016/j.apsusc.2009.10.103

DO - 10.1016/j.apsusc.2009.10.103

M3 - 文章

AN - SCOPUS:74149083563

SN - 0169-4332

VL - 256

SP - 2552

EP - 2556

JO - Applied Surface Science

JF - Applied Surface Science

IS - 8

ER -

Gao YQ, Huang ZM, Hou Y, Wu J, Li ZQ, Chu JH. Crystallization-dependent magnetic properties of Mn _1.56 Co _0.96 Ni _0.48 O ₄ thin films Applied Surface Science. 2010 2月 1;256(8):2552-2556. doi: 10.1016/j.apsusc.2009.10.103

Crystallization-dependent magnetic properties of Mn 1.56 Co 0.96 Ni 0.48 O 4 thin films

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Crystallization-dependent magnetic properties of Mn _1.56 Co _0.96 Ni _0.48 O ₄ thin films